Reine Wallenberg
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- 2012
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Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
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Mark
Continuous gas-phase synthesis of nanowires with tunable properties.
(
- Contribution to journal › Article
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Mark
Progress in growth and characterization of III-V nanowires
2012) 15th European Microscopy Congress 2012(
- Contribution to conference › Abstract
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Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
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Mark
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
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Mark
Degenerate p-doping of InP nanowires for large area tunnel diodes
(
- Contribution to journal › Article
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Mark
Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy
(
- Contribution to journal › Article
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Mark
Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
(
- Contribution to journal › Article
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Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding