High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(2011) IEEE International Electron Devices Meeting (IEDM)- Abstract
- In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2494429
- author
- Egard, Mikael LU ; Ohlsson, Lars LU ; Borg, Mattias LU ; Lenrick, Filip LU ; Wallenberg, Reine LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2011 IEEE International Electron Devices Meeting (IEDM)
- publisher
- IEEE Press
- conference name
- IEEE International Electron Devices Meeting (IEDM)
- conference dates
- 2011-12-05 - 2011-12-07
- external identifiers
-
- wos:000300015300076
- scopus:84857028530
- ISBN
- 978-1-4577-0505-2
- language
- English
- LU publication?
- yes
- id
- d9452a9e-8bba-431a-a077-d1b8c4bc0d96 (old id 2494429)
- date added to LUP
- 2016-04-04 11:06:42
- date last changed
- 2024-04-13 15:19:10
@inproceedings{d9452a9e-8bba-431a-a077-d1b8c4bc0d96, abstract = {{In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.}}, author = {{Egard, Mikael and Ohlsson, Lars and Borg, Mattias and Lenrick, Filip and Wallenberg, Reine and Wernersson, Lars-Erik and Lind, Erik}}, booktitle = {{2011 IEEE International Electron Devices Meeting (IEDM)}}, isbn = {{978-1-4577-0505-2}}, language = {{eng}}, publisher = {{IEEE Press}}, title = {{High Transconductance Self-Aligned Gate-Last Surface Channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFET}}, year = {{2011}}, }