Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

Egard, Mikael LU ; Ohlsson, Lars LU orcid ; Borg, Mattias LU orcid ; Lenrick, Filip LU orcid ; Wallenberg, Reine LU ; Wernersson, Lars-Erik LU and Lind, Erik LU orcid (2011) IEEE International Electron Devices Meeting (IEDM)
Abstract
In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2011 IEEE International Electron Devices Meeting (IEDM)
publisher
IEEE Press
conference name
IEEE International Electron Devices Meeting (IEDM)
conference dates
2011-12-05 - 2011-12-07
external identifiers
  • wos:000300015300076
  • scopus:84857028530
ISBN
978-1-4577-0505-2
language
English
LU publication?
yes
id
d9452a9e-8bba-431a-a077-d1b8c4bc0d96 (old id 2494429)
date added to LUP
2016-04-04 11:06:42
date last changed
2025-10-14 11:51:47
@inproceedings{d9452a9e-8bba-431a-a077-d1b8c4bc0d96,
  abstract     = {{In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.}},
  author       = {{Egard, Mikael and Ohlsson, Lars and Borg, Mattias and Lenrick, Filip and Wallenberg, Reine and Wernersson, Lars-Erik and Lind, Erik}},
  booktitle    = {{2011 IEEE International Electron Devices Meeting (IEDM)}},
  isbn         = {{978-1-4577-0505-2}},
  language     = {{eng}},
  publisher    = {{IEEE Press}},
  title        = {{High Transconductance Self-Aligned Gate-Last Surface Channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFET}},
  year         = {{2011}},
}