Size-selected nanocrystals of III-V semiconductor materials by the aerotaxy method
(1998) In Journal of Aerosol Science 29(5-6). p.737-748- Abstract
In this paper we present a fabrication route to produce size-selected III-V semiconductor nanocrystals via a simple, reliable, and efficient aerosol route. Since this approach includes the reaction of aerosol particles and a self-organized growth of a new compound, all in the aerosol phase, we call this process aerotaxy. Size-selected nanocrystals of different III-V compounds in a diameter range below 20 nm were fabricated using this method. Through the reaction of arsine with gallium droplets or of phosphine with indium droplets, GaAs and InP clusters were formed. Our approach opens the possibility to produce contamination-free and size-selected nanocrystals of compound semiconductor materials with considerable freedom in composition... (More)
In this paper we present a fabrication route to produce size-selected III-V semiconductor nanocrystals via a simple, reliable, and efficient aerosol route. Since this approach includes the reaction of aerosol particles and a self-organized growth of a new compound, all in the aerosol phase, we call this process aerotaxy. Size-selected nanocrystals of different III-V compounds in a diameter range below 20 nm were fabricated using this method. Through the reaction of arsine with gallium droplets or of phosphine with indium droplets, GaAs and InP clusters were formed. Our approach opens the possibility to produce contamination-free and size-selected nanocrystals of compound semiconductor materials with considerable freedom in composition and size.
(Less)
- author
- Deppert, Knut
LU
; Magnusson, Martin H. LU ; Samuelson, Lars LU ; Malm, Jan Olle LU ; Svensson, Chatrin and Bovin, Jan Olov LU
- organization
- publishing date
- 1998-06-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Aerosol Science
- volume
- 29
- issue
- 5-6
- pages
- 12 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:0032100678
- ISSN
- 0021-8502
- DOI
- 10.1016/S0021-8502(97)10017-9
- language
- English
- LU publication?
- yes
- id
- 005665f2-2578-4080-b9b0-ffd30050c69b
- date added to LUP
- 2019-05-08 16:22:17
- date last changed
- 2022-03-17 23:27:40
@article{005665f2-2578-4080-b9b0-ffd30050c69b, abstract = {{<p>In this paper we present a fabrication route to produce size-selected III-V semiconductor nanocrystals via a simple, reliable, and efficient aerosol route. Since this approach includes the reaction of aerosol particles and a self-organized growth of a new compound, all in the aerosol phase, we call this process aerotaxy. Size-selected nanocrystals of different III-V compounds in a diameter range below 20 nm were fabricated using this method. Through the reaction of arsine with gallium droplets or of phosphine with indium droplets, GaAs and InP clusters were formed. Our approach opens the possibility to produce contamination-free and size-selected nanocrystals of compound semiconductor materials with considerable freedom in composition and size.</p>}}, author = {{Deppert, Knut and Magnusson, Martin H. and Samuelson, Lars and Malm, Jan Olle and Svensson, Chatrin and Bovin, Jan Olov}}, issn = {{0021-8502}}, language = {{eng}}, month = {{06}}, number = {{5-6}}, pages = {{737--748}}, publisher = {{Elsevier}}, series = {{Journal of Aerosol Science}}, title = {{Size-selected nanocrystals of III-V semiconductor materials by the aerotaxy method}}, url = {{http://dx.doi.org/10.1016/S0021-8502(97)10017-9}}, doi = {{10.1016/S0021-8502(97)10017-9}}, volume = {{29}}, year = {{1998}}, }