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Doping of GaAsP nanowires grown by aerotaxy

Sivakumar, Sudhakar LU ; Geijselaers, Irene LU ; Persson, Axel LU ; Wallenberg, Reine LU ; Deppert, Knut LU ; Samuelson, Lars LU and Magnusson, Martin H. LU (2019) 21th International Vacuum Congress
Abstract (Swedish)
Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by... (More)
Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements. (Less)
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organization
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Contribution to conference
publication status
published
subject
conference name
21th International Vacuum Congress
conference location
Malmö, Sweden
conference dates
2019-07-01 - 2019-07-05
language
English
LU publication?
yes
id
097bc01f-e0d2-4cbd-b1d5-883cd023bb6d
date added to LUP
2019-09-12 15:48:43
date last changed
2019-09-17 02:18:25
@misc{097bc01f-e0d2-4cbd-b1d5-883cd023bb6d,
  abstract     = {Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]<br/>Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]<br/>The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.},
  author       = {Sivakumar, Sudhakar and Geijselaers, Irene and Persson, Axel and Wallenberg, Reine and Deppert, Knut and Samuelson, Lars and Magnusson, Martin H.},
  language     = {eng},
  location     = {Malmö, Sweden},
  month        = {07},
  title        = {Doping of GaAsP nanowires grown by aerotaxy},
  year         = {2019},
}