Doping of GaAsP nanowires grown by aerotaxy
(2019) 21th International Vacuum Congress- Abstract
- Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by... (More) - Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/097bc01f-e0d2-4cbd-b1d5-883cd023bb6d
- author
- Sivakumar, Sudhakar LU ; Geijselaers, Irene LU ; Persson, Axel LU ; Wallenberg, Reine LU ; Deppert, Knut LU ; Samuelson, Lars LU and Magnusson, Martin H. LU
- organization
- publishing date
- 2019-07-01
- type
- Contribution to conference
- publication status
- published
- subject
- conference name
- 21th International Vacuum Congress
- conference location
- Malmö, Sweden
- conference dates
- 2019-07-01 - 2019-07-05
- language
- English
- LU publication?
- yes
- id
- 097bc01f-e0d2-4cbd-b1d5-883cd023bb6d
- date added to LUP
- 2019-09-12 15:48:43
- date last changed
- 2022-04-05 15:00:21
@misc{097bc01f-e0d2-4cbd-b1d5-883cd023bb6d, abstract = {{Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]<br/>Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]<br/>The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.}}, author = {{Sivakumar, Sudhakar and Geijselaers, Irene and Persson, Axel and Wallenberg, Reine and Deppert, Knut and Samuelson, Lars and Magnusson, Martin H.}}, language = {{eng}}, month = {{07}}, title = {{Doping of GaAsP nanowires grown by aerotaxy}}, year = {{2019}}, }