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Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.

Dick Thelander, Kimberly LU ; Deppert, Knut LU ; Samuelson, Lars LU ; Wallenberg, Reine LU and Ross, Frances (2008) In Nano Letters 8(11). p.4087-4091
Abstract
We demonstrate two very different morphologies for GaP and GaAs nanowires grown by Au-assisted MOVPE on Si(111) substrates: rodlike wires and tapered wires with sharp tips. We show that the morphology is related to the stability of the particles at the wire tips during growth, and we propose that the mechanism of this effect is diffusion of Au away from the tip. Diffusion occurs, leading to tapered wires, only if there is a clean Si surface to act as a reservoir for the Au. Furthermore, the presence of indium in the particles, even at background levels from previous growth runs, inhibits the migration of Au. These results demonstrate a dramatic example of the sensitivity of wire morphology to substrate and particle chemistry, which could... (More)
We demonstrate two very different morphologies for GaP and GaAs nanowires grown by Au-assisted MOVPE on Si(111) substrates: rodlike wires and tapered wires with sharp tips. We show that the morphology is related to the stability of the particles at the wire tips during growth, and we propose that the mechanism of this effect is diffusion of Au away from the tip. Diffusion occurs, leading to tapered wires, only if there is a clean Si surface to act as a reservoir for the Au. Furthermore, the presence of indium in the particles, even at background levels from previous growth runs, inhibits the migration of Au. These results demonstrate a dramatic example of the sensitivity of wire morphology to substrate and particle chemistry, which could provide an important tool to tune nanowire morphology through particle alloying or surface treatment. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
8
issue
11
pages
4087 - 4091
publisher
The American Chemical Society
external identifiers
  • wos:000260888600095
  • pmid:18947257
  • scopus:61649122131
ISSN
1530-6992
DOI
10.1021/nl8027153
language
English
LU publication?
yes
id
d806a5e0-26cf-4912-a357-f7ce62754af6 (old id 1262011)
date added to LUP
2008-12-01 11:22:55
date last changed
2017-07-23 04:17:46
@article{d806a5e0-26cf-4912-a357-f7ce62754af6,
  abstract     = {We demonstrate two very different morphologies for GaP and GaAs nanowires grown by Au-assisted MOVPE on Si(111) substrates: rodlike wires and tapered wires with sharp tips. We show that the morphology is related to the stability of the particles at the wire tips during growth, and we propose that the mechanism of this effect is diffusion of Au away from the tip. Diffusion occurs, leading to tapered wires, only if there is a clean Si surface to act as a reservoir for the Au. Furthermore, the presence of indium in the particles, even at background levels from previous growth runs, inhibits the migration of Au. These results demonstrate a dramatic example of the sensitivity of wire morphology to substrate and particle chemistry, which could provide an important tool to tune nanowire morphology through particle alloying or surface treatment.},
  author       = {Dick Thelander, Kimberly and Deppert, Knut and Samuelson, Lars and Wallenberg, Reine and Ross, Frances},
  issn         = {1530-6992},
  language     = {eng},
  number       = {11},
  pages        = {4087--4091},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.},
  url          = {http://dx.doi.org/10.1021/nl8027153},
  volume       = {8},
  year         = {2008},
}