Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells

Alcer, David LU orcid ; Tirrito, Matteo LU ; Hrachowina, Lukas LU and Borgström, Magnus T. LU (2024) In ACS Applied Nano Materials 7(2). p.2352-2358
Abstract

We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G... (More)

We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G illumination confirm voltage addition of the subcells, resulting in an open-circuit voltage of up to 1.91 V. However, the short-circuit current density is low, ranging between 0.24 and 3.44 mA/cm2, which leads to a resulting solar conversion efficiency of up to 3.60%. Our work shows a path forward toward high-efficiency NW photovoltaics and identifies critical issues that need improvement.

(Less)
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaInP, InP, nanowire solar cell, photovoltaics, tandem junction
in
ACS Applied Nano Materials
volume
7
issue
2
pages
7 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:38298252
  • scopus:85182560828
ISSN
2574-0970
DOI
10.1021/acsanm.3c05909
language
English
LU publication?
yes
id
13bab6c9-8d49-4282-8447-9d2af6834773
date added to LUP
2024-02-15 10:53:41
date last changed
2024-04-16 09:39:57
@article{13bab6c9-8d49-4282-8447-9d2af6834773,
  abstract     = {{<p>We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G illumination confirm voltage addition of the subcells, resulting in an open-circuit voltage of up to 1.91 V. However, the short-circuit current density is low, ranging between 0.24 and 3.44 mA/cm<sup>2</sup>, which leads to a resulting solar conversion efficiency of up to 3.60%. Our work shows a path forward toward high-efficiency NW photovoltaics and identifies critical issues that need improvement.</p>}},
  author       = {{Alcer, David and Tirrito, Matteo and Hrachowina, Lukas and Borgström, Magnus T.}},
  issn         = {{2574-0970}},
  keywords     = {{GaInP; InP; nanowire solar cell; photovoltaics; tandem junction}},
  language     = {{eng}},
  month        = {{01}},
  number       = {{2}},
  pages        = {{2352--2358}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Nano Materials}},
  title        = {{Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells}},
  url          = {{http://dx.doi.org/10.1021/acsanm.3c05909}},
  doi          = {{10.1021/acsanm.3c05909}},
  volume       = {{7}},
  year         = {{2024}},
}