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Epitaxial III-V nanowires on silicon

Mårtensson, Thomas LU ; Svensson, C Patrik T; Wacaser, Brent LU ; Larsson, Magnus LU ; Seifert, Werner LU ; Deppert, Knut LU ; Gustafsson, Anders LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2004) In Nano Letters 4(10). p.1987-1990
Abstract
We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
4
issue
10
pages
1987 - 1990
publisher
The American Chemical Society
external identifiers
  • wos:000224514800032
  • scopus:7544241259
ISSN
1530-6992
DOI
10.1021/nl0487267
language
English
LU publication?
yes
id
f16f2f9b-e886-4026-bd0c-85ecfcd858ee (old id 140838)
date added to LUP
2007-07-13 14:31:09
date last changed
2017-12-10 04:39:27
@article{f16f2f9b-e886-4026-bd0c-85ecfcd858ee,
  abstract     = {We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.},
  author       = {Mårtensson, Thomas and Svensson, C Patrik T and Wacaser, Brent and Larsson, Magnus and Seifert, Werner and Deppert, Knut and Gustafsson, Anders and Wallenberg, Reine and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  number       = {10},
  pages        = {1987--1990},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Epitaxial III-V nanowires on silicon},
  url          = {http://dx.doi.org/10.1021/nl0487267},
  volume       = {4},
  year         = {2004},
}