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Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

Astromskas, Gvidas LU ; Wallenberg, Reine LU and Wernersson, Lars-Erik LU (2009) In Journal of Vacuum Science and Technology B 27(5). p.2222-2226
Abstract
InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society.... (More)
InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859] (Less)
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Contribution to journal
publication status
published
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in
Journal of Vacuum Science and Technology B
volume
27
issue
5
pages
2222 - 2226
publisher
American Institute of Physics
external identifiers
  • wos:000270447400029
  • scopus:70349675885
ISSN
1520-8567
DOI
10.1116/1.3222859
language
English
LU publication?
yes
id
edfe7cc8-da5f-48e1-8b1b-c590cbad6739 (old id 1489540)
date added to LUP
2009-10-22 10:43:55
date last changed
2017-01-01 05:11:24
@article{edfe7cc8-da5f-48e1-8b1b-c590cbad6739,
  abstract     = {InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]},
  author       = {Astromskas, Gvidas and Wallenberg, Reine and Wernersson, Lars-Erik},
  issn         = {1520-8567},
  language     = {eng},
  number       = {5},
  pages        = {2222--2226},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Electrical characterization of thin InAs films grown on patterned W/GaAs substrates},
  url          = {http://dx.doi.org/10.1116/1.3222859},
  volume       = {27},
  year         = {2009},
}