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MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures

Borg, Mattias LU ; Messing, Maria LU ; Caroff, Philippe LU ; Dick Thelander, Kimberly LU ; Deppert, Knut LU and Wernersson, Lars-Erik LU (2009) 21st International Conference on Indium Phosphide and Related Materials In 2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM) p.249-252
Abstract
We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is... (More)
We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common. (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM)
pages
249 - 252
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
21st International Conference on Indium Phosphide and Related Materials
external identifiers
  • wos:000270539400066
  • scopus:70349483749
ISSN
1092-8669
language
English
LU publication?
yes
id
864e6539-f8d9-4c99-b135-0f143d2ff44e (old id 1507671)
date added to LUP
2009-11-19 16:14:13
date last changed
2017-03-26 03:47:34
@inproceedings{864e6539-f8d9-4c99-b135-0f143d2ff44e,
  abstract     = {We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.},
  author       = {Borg, Mattias and Messing, Maria and Caroff, Philippe and Dick Thelander, Kimberly and Deppert, Knut and Wernersson, Lars-Erik},
  booktitle    = {2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM)},
  issn         = {1092-8669},
  language     = {eng},
  pages        = {249--252},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures},
  year         = {2009},
}