InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
(2009) In Nanotechnology 20(49).- Abstract
- We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle... (More)
- We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1512070
- author
- Caroff, Philippe
LU
; Messing, Maria
LU
; Borg, Mattias
LU
; Dick Thelander, Kimberly LU ; Deppert, Knut LU
and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 20
- issue
- 49
- article number
- 495606
- publisher
- IOP Publishing
- external identifiers
-
- wos:000271662900017
- pmid:19904026
- scopus:70449839786
- pmid:19904026
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/20/49/495606
- language
- English
- LU publication?
- yes
- id
- 3aee2833-2163-4802-b06f-604bfb731d3e (old id 1512070)
- date added to LUP
- 2016-04-01 11:58:38
- date last changed
- 2022-05-06 19:55:53
@article{3aee2833-2163-4802-b06f-604bfb731d3e, abstract = {{We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.}}, author = {{Caroff, Philippe and Messing, Maria and Borg, Mattias and Dick Thelander, Kimberly and Deppert, Knut and Wernersson, Lars-Erik}}, issn = {{0957-4484}}, language = {{eng}}, number = {{49}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.}}, url = {{http://dx.doi.org/10.1088/0957-4484/20/49/495606}}, doi = {{10.1088/0957-4484/20/49/495606}}, volume = {{20}}, year = {{2009}}, }