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InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.

Caroff, Philippe LU ; Messing, Maria LU ; Borg, Mattias LU ; Dick Thelander, Kimberly LU ; Deppert, Knut LU and Wernersson, Lars-Erik LU (2009) In Nanotechnology 20(49).
Abstract
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle... (More)
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
20
issue
49
publisher
IOP Publishing
external identifiers
  • wos:000271662900017
  • pmid:19904026
  • scopus:70449839786
ISSN
0957-4484
DOI
10.1088/0957-4484/20/49/495606
language
English
LU publication?
yes
id
3aee2833-2163-4802-b06f-604bfb731d3e (old id 1512070)
date added to LUP
2009-12-01 08:52:13
date last changed
2017-11-12 03:23:49
@article{3aee2833-2163-4802-b06f-604bfb731d3e,
  abstract     = {We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.},
  articleno    = {495606},
  author       = {Caroff, Philippe and Messing, Maria and Borg, Mattias and Dick Thelander, Kimberly and Deppert, Knut and Wernersson, Lars-Erik},
  issn         = {0957-4484},
  language     = {eng},
  number       = {49},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.},
  url          = {http://dx.doi.org/10.1088/0957-4484/20/49/495606},
  volume       = {20},
  year         = {2009},
}