Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications
(2005) In Nanotechnology 16(6). p.936-939- Abstract
- We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical... (More)
- We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/152189
- author
- Svensson, CPT ; Seifert, Werner LU ; Larsson, Magnus LU ; Wallenberg, Reine LU ; Stangl, J ; Bauer, G and Samuelson, Lars LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 16
- issue
- 6
- pages
- 936 - 939
- publisher
- IOP Publishing
- external identifiers
-
- wos:000230144700052
- scopus:18744377170
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/16/6/052
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- abd55b3f-3a27-49fd-967c-9cd2fa8aad59 (old id 152189)
- date added to LUP
- 2016-04-01 11:57:18
- date last changed
- 2022-01-26 20:43:53
@article{abd55b3f-3a27-49fd-967c-9cd2fa8aad59, abstract = {{We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.}}, author = {{Svensson, CPT and Seifert, Werner and Larsson, Magnus and Wallenberg, Reine and Stangl, J and Bauer, G and Samuelson, Lars}}, issn = {{0957-4484}}, language = {{eng}}, number = {{6}}, pages = {{936--939}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications}}, url = {{http://dx.doi.org/10.1088/0957-4484/16/6/052}}, doi = {{10.1088/0957-4484/16/6/052}}, volume = {{16}}, year = {{2005}}, }