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Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications

Svensson, CPT; Seifert, Werner LU ; Larsson, Magnus LU ; Wallenberg, Reine LU ; Stangl, J; Bauer, G and Samuelson, Lars LU (2005) In Nanotechnology 16(6). p.936-939
Abstract
We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical... (More)
We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
16
issue
6
pages
936 - 939
publisher
IOP Publishing
external identifiers
  • wos:000230144700052
  • scopus:18744377170
ISSN
0957-4484
DOI
10.1088/0957-4484/16/6/052
language
English
LU publication?
yes
id
abd55b3f-3a27-49fd-967c-9cd2fa8aad59 (old id 152189)
date added to LUP
2007-07-13 16:27:24
date last changed
2017-02-05 03:33:59
@article{abd55b3f-3a27-49fd-967c-9cd2fa8aad59,
  abstract     = {We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.},
  author       = {Svensson, CPT and Seifert, Werner and Larsson, Magnus and Wallenberg, Reine and Stangl, J and Bauer, G and Samuelson, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {6},
  pages        = {936--939},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications},
  url          = {http://dx.doi.org/10.1088/0957-4484/16/6/052},
  volume       = {16},
  year         = {2005},
}