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Control of III-V nanowire crystal structure by growth parameter tuning

Dick Thelander, Kimberly LU ; Caroff, Philippe LU ; Bolinsson, Jessica LU ; Messing, Maria LU ; Johansson, Jonas LU ; Deppert, Knut LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2010) In Semiconductor Science and Technology 25(2).
Abstract
In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio.... (More)
In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III-V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Semiconductor Science and Technology
volume
25
issue
2
publisher
IOP Publishing
external identifiers
  • wos:000273852300010
  • scopus:76749107066
ISSN
0268-1242
DOI
10.1088/0268-1242/25/2/024009
language
English
LU publication?
yes
id
8402327e-95eb-4be7-81a9-717ce1d827cd (old id 1547137)
date added to LUP
2010-02-24 11:17:16
date last changed
2018-06-24 04:00:11
@article{8402327e-95eb-4be7-81a9-717ce1d827cd,
  abstract     = {In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III-V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.},
  articleno    = {024009},
  author       = {Dick Thelander, Kimberly and Caroff, Philippe and Bolinsson, Jessica and Messing, Maria and Johansson, Jonas and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars},
  issn         = {0268-1242},
  language     = {eng},
  number       = {2},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {Control of III-V nanowire crystal structure by growth parameter tuning},
  url          = {http://dx.doi.org/10.1088/0268-1242/25/2/024009},
  volume       = {25},
  year         = {2010},
}