Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires

Wagner, Jakob LU ; Sköld, Niklas LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2010) In Journal of Crystal Growth 312(10). p.1755-1760
Abstract
The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the [(1) over bar (1) over bar (1) over bar] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Core-shell nanowire, HRTEM, Segregation, GaAs, AlxIn1-xP
in
Journal of Crystal Growth
volume
312
issue
10
pages
1755 - 1760
publisher
Elsevier
external identifiers
  • wos:000277483100018
  • scopus:77950300508
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2010.02.009
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
1fc90732-b96b-46b0-b5c2-53dd8bf4de84 (old id 1618424)
date added to LUP
2016-04-01 14:13:48
date last changed
2025-04-04 14:35:21
@article{1fc90732-b96b-46b0-b5c2-53dd8bf4de84,
  abstract     = {{The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the [(1) over bar (1) over bar (1) over bar] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved.}},
  author       = {{Wagner, Jakob and Sköld, Niklas and Wallenberg, Reine and Samuelson, Lars}},
  issn         = {{0022-0248}},
  keywords     = {{Core-shell nanowire; HRTEM; Segregation; GaAs; AlxIn1-xP}},
  language     = {{eng}},
  number       = {{10}},
  pages        = {{1755--1760}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Crystal Growth}},
  title        = {{Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires}},
  url          = {{http://dx.doi.org/10.1016/j.jcrysgro.2010.02.009}},
  doi          = {{10.1016/j.jcrysgro.2010.02.009}},
  volume       = {{312}},
  year         = {{2010}},
}