Semiconductor nanowires and sub-micrometer platelets for nitride-based nano-LED applications
Bi, Zhaoxia LU
; Gustafsson, Anders
LU
and Samuelson, Lars
LU
(2025)
In Comprehensive Semiconductor Science and Technology
p.376-412
- Abstract
- Nano-LEDs, with sizes smaller than 1 μm and close to sub-wavelengths, have received increasing attention because of their potential applications in next-generation self-emissive displays, visible light communication, optogenetics, maskless lithography, on-chip super-resolution microscopy, etc. In contrast to the top-down fabrication of nano-LEDs, where the efficiency drop caused by dry-etching related side wall damage is a challenge, bottom-up growth of nano-LEDs has been intensively studied nowadays. In this chapter, we review two platforms for the bottom-up fabrication of nitride nano-LEDs which we have been strongly engaged in for the past years. One platform is based on GaN nanowires, on which p-i-n LED structures can be grown either... (More)
- Nano-LEDs, with sizes smaller than 1 μm and close to sub-wavelengths, have received increasing attention because of their potential applications in next-generation self-emissive displays, visible light communication, optogenetics, maskless lithography, on-chip super-resolution microscopy, etc. In contrast to the top-down fabrication of nano-LEDs, where the efficiency drop caused by dry-etching related side wall damage is a challenge, bottom-up growth of nano-LEDs has been intensively studied nowadays. In this chapter, we review two platforms for the bottom-up fabrication of nitride nano-LEDs which we have been strongly engaged in for the past years. One platform is based on GaN nanowires, on which p-i-n LED structures can be grown either along the nanowire (axially) or in a core/shell way depending on growth technologies. For the nano-LEDs based on GaN nanowires, the growth on different crystal facets and the homogeneity of InGaN QWs on m-plane side walls need to be improved for high efficiencies and small color shift. The other platform is based on sub-micrometer InGaN platelets which have atomically smooth c-planes for InGaN quantum well active layers. Compared with GaN, such ternary platelets offer larger in-plane lattice constants, making it possible to grow highly efficient green and red nitride LEDs with reduced lattice mismatch strains, on par with their blue counterparts. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/164b11d3-89f0-41c5-b783-adf77ae033ab
- author
- Bi, Zhaoxia
LU
; Gustafsson, Anders
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2025
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Comprehensive Semiconductor Science and Technology
- series title
- Comprehensive Semiconductor Science and Technology
- editor
- Fornari, Roberto
- pages
- 37 pages
- external identifiers
-
- scopus:85217074897
- ISBN
- 978-0-323-95819-6
- DOI
- 10.1016/b978-0-323-96027-4.00024-3
- language
- English
- LU publication?
- yes
- id
- 164b11d3-89f0-41c5-b783-adf77ae033ab
- date added to LUP
- 2025-01-07 17:28:00
- date last changed
- 2025-04-04 15:32:59
@inbook{164b11d3-89f0-41c5-b783-adf77ae033ab,
abstract = {{Nano-LEDs, with sizes smaller than 1 μm and close to sub-wavelengths, have received increasing attention because of their potential applications in next-generation self-emissive displays, visible light communication, optogenetics, maskless lithography, on-chip super-resolution microscopy, etc. In contrast to the top-down fabrication of nano-LEDs, where the efficiency drop caused by dry-etching related side wall damage is a challenge, bottom-up growth of nano-LEDs has been intensively studied nowadays. In this chapter, we review two platforms for the bottom-up fabrication of nitride nano-LEDs which we have been strongly engaged in for the past years. One platform is based on GaN nanowires, on which p-i-n LED structures can be grown either along the nanowire (axially) or in a core/shell way depending on growth technologies. For the nano-LEDs based on GaN nanowires, the growth on different crystal facets and the homogeneity of InGaN QWs on m-plane side walls need to be improved for high efficiencies and small color shift. The other platform is based on sub-micrometer InGaN platelets which have atomically smooth c-planes for InGaN quantum well active layers. Compared with GaN, such ternary platelets offer larger in-plane lattice constants, making it possible to grow highly efficient green and red nitride LEDs with reduced lattice mismatch strains, on par with their blue counterparts.}},
author = {{Bi, Zhaoxia and Gustafsson, Anders and Samuelson, Lars}},
booktitle = {{Comprehensive Semiconductor Science and Technology}},
editor = {{Fornari, Roberto}},
isbn = {{978-0-323-95819-6}},
language = {{eng}},
pages = {{376--412}},
series = {{Comprehensive Semiconductor Science and Technology}},
title = {{Semiconductor nanowires and sub-micrometer platelets for nitride-based nano-LED applications}},
url = {{http://dx.doi.org/10.1016/b978-0-323-96027-4.00024-3}},
doi = {{10.1016/b978-0-323-96027-4.00024-3}},
year = {{2025}},
}