Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
(2010) In Nano Letters 10(Online October 7, 2010). p.4443-4449- Abstract
- Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be... (More)
- Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1711271
- author
- Mandl, Bernhard LU ; Stangl, Julian ; Hilner, Emelie LU ; Zakharov, Alexei LU ; Hillerich, Karla LU ; Dey, Anil LU ; Samuelson, Lars LU ; Bauer, Günther ; Deppert, Knut LU and Mikkelsen, Anders LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 10
- issue
- Online October 7, 2010
- pages
- 4443 - 4449
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000283907600025
- pmid:20939507
- scopus:78449313623
- pmid:20939507
- ISSN
- 1530-6992
- DOI
- 10.1021/nl1022699
- language
- English
- LU publication?
- yes
- id
- f1fc4787-802b-49b6-930b-2f35107ba1f1 (old id 1711271)
- date added to LUP
- 2016-04-01 14:40:02
- date last changed
- 2023-11-13 10:37:40
@article{f1fc4787-802b-49b6-930b-2f35107ba1f1, abstract = {{Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.}}, author = {{Mandl, Bernhard and Stangl, Julian and Hilner, Emelie and Zakharov, Alexei and Hillerich, Karla and Dey, Anil and Samuelson, Lars and Bauer, Günther and Deppert, Knut and Mikkelsen, Anders}}, issn = {{1530-6992}}, language = {{eng}}, number = {{Online October 7, 2010}}, pages = {{4443--4449}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Growth Mechanism of Self-Catalyzed Group III-V Nanowires.}}, url = {{http://dx.doi.org/10.1021/nl1022699}}, doi = {{10.1021/nl1022699}}, volume = {{10}}, year = {{2010}}, }