Advanced

Growth Mechanism of Self-Catalyzed Group III-V Nanowires.

Mandl, Bernhard LU ; Stangl, Julian; Hilner, Emelie LU ; Zakharov, Alexei LU ; Hillerich, Karla LU ; Dey, Anil LU ; Samuelson, Lars LU ; Bauer, Günther; Deppert, Knut LU and Mikkelsen, Anders LU (2010) In Nano Letters 10(Online October 7, 2010). p.4443-4449
Abstract
Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be... (More)
Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
10
issue
Online October 7, 2010
pages
4443 - 4449
publisher
The American Chemical Society
external identifiers
  • wos:000283907600025
  • pmid:20939507
  • scopus:78449313623
ISSN
1530-6992
DOI
10.1021/nl1022699
language
English
LU publication?
yes
id
f1fc4787-802b-49b6-930b-2f35107ba1f1 (old id 1711271)
date added to LUP
2010-11-05 09:30:37
date last changed
2018-07-15 03:58:57
@article{f1fc4787-802b-49b6-930b-2f35107ba1f1,
  abstract     = {Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.},
  author       = {Mandl, Bernhard and Stangl, Julian and Hilner, Emelie and Zakharov, Alexei and Hillerich, Karla and Dey, Anil and Samuelson, Lars and Bauer, Günther and Deppert, Knut and Mikkelsen, Anders},
  issn         = {1530-6992},
  language     = {eng},
  number       = {Online October 7, 2010},
  pages        = {4443--4449},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Growth Mechanism of Self-Catalyzed Group III-V Nanowires.},
  url          = {http://dx.doi.org/10.1021/nl1022699},
  volume       = {10},
  year         = {2010},
}