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Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Timm, Rainer LU orcid ; Alexander, Fian ; Hjort, Martin LU orcid ; Thelander, Claes LU ; Lind, Erik LU orcid ; Andersen, Jesper N LU ; Wernersson, Lars-Erik LU and Mikkelsen, Anders LU (2010) In Applied Physics Letters 97.
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
97
article number
132904
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000282443800052
  • scopus:77957685529
ISSN
0003-6951
DOI
10.1063/1.3495776
language
English
LU publication?
yes
id
40e24a4a-c2dd-4109-aa62-836a9d4dd3c6 (old id 1712780)
date added to LUP
2016-04-01 10:51:40
date last changed
2024-05-05 23:20:21
@article{40e24a4a-c2dd-4109-aa62-836a9d4dd3c6,
  author       = {{Timm, Rainer and Alexander, Fian and Hjort, Martin and Thelander, Claes and Lind, Erik and Andersen, Jesper N and Wernersson, Lars-Erik and Mikkelsen, Anders}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2}},
  url          = {{http://dx.doi.org/10.1063/1.3495776}},
  doi          = {{10.1063/1.3495776}},
  volume       = {{97}},
  year         = {{2010}},
}