Advanced

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

Astromskas, Gvidas LU ; Storm, Kristian LU ; Caroff, Philippe LU ; Borgström, Magnus LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials In Microelectronic Engineering 88(4). p.444-447
Abstract
InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV characteristics are measured at temperatures in the range between -140 and 40 degrees C and the CV characteristics for nanowires with different Sn and Se n-type doping levels are compared. The comparison of the data at various doping levels points towards large number of traps for highly doped samples, caused by the preferential dopant precursor incorporation at the nanowire surface. We also evaluate the frequency dispersion of the accumulation capacitance and determine values below 2%... (More)
InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV characteristics are measured at temperatures in the range between -140 and 40 degrees C and the CV characteristics for nanowires with different Sn and Se n-type doping levels are compared. The comparison of the data at various doping levels points towards large number of traps for highly doped samples, caused by the preferential dopant precursor incorporation at the nanowire surface. We also evaluate the frequency dispersion of the accumulation capacitance and determine values below 2% with weak temperature dependence, indicating the existence of border traps in these nanowire capacitors. (C) 2010 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
III/V, Nanowire doping, Capacitance-voltage, InAs, Vertical wrap gate
in
Microelectronic Engineering
volume
88
issue
4
pages
444 - 447
publisher
Elsevier
conference name
EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials
external identifiers
  • wos:000288524100030
  • scopus:79751524891
ISSN
0167-9317
1873-5568
DOI
10.1016/j.mee.2010.08.010
language
English
LU publication?
yes
id
2259c4ed-3b1a-4e6a-acea-2c7f3069dc4f (old id 1925795)
date added to LUP
2011-05-12 15:12:58
date last changed
2017-01-01 03:08:15
@inproceedings{2259c4ed-3b1a-4e6a-acea-2c7f3069dc4f,
  abstract     = {InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV characteristics are measured at temperatures in the range between -140 and 40 degrees C and the CV characteristics for nanowires with different Sn and Se n-type doping levels are compared. The comparison of the data at various doping levels points towards large number of traps for highly doped samples, caused by the preferential dopant precursor incorporation at the nanowire surface. We also evaluate the frequency dispersion of the accumulation capacitance and determine values below 2% with weak temperature dependence, indicating the existence of border traps in these nanowire capacitors. (C) 2010 Elsevier B.V. All rights reserved.},
  author       = {Astromskas, Gvidas and Storm, Kristian and Caroff, Philippe and Borgström, Magnus and Lind, Erik and Wernersson, Lars-Erik},
  booktitle    = {Microelectronic Engineering},
  issn         = {0167-9317},
  keyword      = {III/V,Nanowire doping,Capacitance-voltage,InAs,Vertical wrap gate},
  language     = {eng},
  number       = {4},
  pages        = {444--447},
  publisher    = {Elsevier},
  title        = {Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method},
  url          = {http://dx.doi.org/10.1016/j.mee.2010.08.010},
  volume       = {88},
  year         = {2011},
}