Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
(2011) 17th Conference on "Insulating Films on Semiconductors" 88. p.1091-1094- Abstract
- We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction
of the surface.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2063834
- author
- Timm, Rainer LU ; Hjort, Martin LU ; Fian, Alexander ; Thelander, Claes LU ; Lind, Erik LU ; Andersen, Jesper N LU ; Wernersson, Lars-Erik LU and Mikkelsen, Anders LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Microelectronic Engineering
- volume
- 88
- pages
- 4 pages
- conference name
- 17th Conference on "Insulating Films on Semiconductors"
- conference location
- Grenoble, France
- conference dates
- 2011-06-21 - 2011-06-24
- external identifiers
-
- wos:000292572700013
- scopus:79958031810
- DOI
- 10.1016/j.mee.2011.03.087
- language
- English
- LU publication?
- yes
- id
- 6f168e83-74b0-4ea6-82bc-db526f809d1d (old id 2063834)
- date added to LUP
- 2016-04-04 14:18:19
- date last changed
- 2024-01-13 12:18:29
@inproceedings{6f168e83-74b0-4ea6-82bc-db526f809d1d, abstract = {{We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction<br/><br> of the surface.}}, author = {{Timm, Rainer and Hjort, Martin and Fian, Alexander and Thelander, Claes and Lind, Erik and Andersen, Jesper N and Wernersson, Lars-Erik and Mikkelsen, Anders}}, booktitle = {{Microelectronic Engineering}}, language = {{eng}}, pages = {{1091--1094}}, title = {{Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy}}, url = {{http://dx.doi.org/10.1016/j.mee.2011.03.087}}, doi = {{10.1016/j.mee.2011.03.087}}, volume = {{88}}, year = {{2011}}, }