Advanced

Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Timm, Rainer LU ; Hjort, Martin LU ; Fian, Alexander; Thelander, Claes LU ; Lind, Erik LU ; Andersen, Jesper N LU ; Wernersson, Lars-Erik LU and Mikkelsen, Anders LU (2011) 17th Conference on "Insulating Films on Semiconductors" In Microelectronic Engineering 88. p.1091-1094
Abstract
We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction

of the surface.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Microelectronic Engineering
volume
88
pages
1091 - 1094
conference name
17th Conference on "Insulating Films on Semiconductors"
external identifiers
  • wos:000292572700013
  • scopus:79958031810
DOI
10.1016/j.mee.2011.03.087
language
English
LU publication?
yes
id
6f168e83-74b0-4ea6-82bc-db526f809d1d (old id 2063834)
date added to LUP
2011-08-16 17:17:30
date last changed
2017-02-26 04:36:05
@inproceedings{6f168e83-74b0-4ea6-82bc-db526f809d1d,
  abstract     = {We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction<br/><br>
of the surface.},
  author       = {Timm, Rainer and Hjort, Martin and Fian, Alexander and Thelander, Claes and Lind, Erik and Andersen, Jesper N and Wernersson, Lars-Erik and Mikkelsen, Anders},
  booktitle    = {Microelectronic Engineering},
  language     = {eng},
  pages        = {1091--1094},
  title        = {Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy},
  url          = {http://dx.doi.org/10.1016/j.mee.2011.03.087},
  volume       = {88},
  year         = {2011},
}