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Electron Trapping in InP Nanowire FETs with Stacking Faults.

Wallentin, Jesper LU ; Ek, Martin LU ; Wallenberg, Reine LU ; Samuelson, Lars LU and Borgström, Magnus LU (2012) In Nano Letters 12(1). p.151-155
Abstract
Semiconductor III-V nanowires are promising components of future electronic and optoelectronic devices, but they typically show a mixed wurtzite-zinc blende crystal structure. Here we show, theoretically and experimentally, that the crystal structure dominates the conductivity in such InP nanowires. Undoped devices show very low conductivities and mobilities. The zincblende segments are quantum wells orthogonal to the current path and our calculations indicate that an electron concentration of up to 4.6 × 10(18) cm(-3) can be trapped in these. The calculations also show that the room temperature conductivity is controlled by the longest zincblende segment, and that stochastic variations in this length lead to an order of magnitude... (More)
Semiconductor III-V nanowires are promising components of future electronic and optoelectronic devices, but they typically show a mixed wurtzite-zinc blende crystal structure. Here we show, theoretically and experimentally, that the crystal structure dominates the conductivity in such InP nanowires. Undoped devices show very low conductivities and mobilities. The zincblende segments are quantum wells orthogonal to the current path and our calculations indicate that an electron concentration of up to 4.6 × 10(18) cm(-3) can be trapped in these. The calculations also show that the room temperature conductivity is controlled by the longest zincblende segment, and that stochastic variations in this length lead to an order of magnitude variation in conductivity. The mobility shows an unexpected decrease for low doping levels, as well as an unusual temperature dependence that bear resemblance with polycrystalline semiconductors. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
12
issue
1
pages
151 - 155
publisher
The American Chemical Society
external identifiers
  • wos:000298943100026
  • pmid:22149329
  • scopus:84855721521
ISSN
1530-6992
DOI
10.1021/nl203213d
language
English
LU publication?
yes
id
80c2dad8-f8b2-4b0f-9a84-3392a04f773d (old id 2274347)
date added to LUP
2012-01-09 14:08:18
date last changed
2017-11-19 03:48:05
@article{80c2dad8-f8b2-4b0f-9a84-3392a04f773d,
  abstract     = {Semiconductor III-V nanowires are promising components of future electronic and optoelectronic devices, but they typically show a mixed wurtzite-zinc blende crystal structure. Here we show, theoretically and experimentally, that the crystal structure dominates the conductivity in such InP nanowires. Undoped devices show very low conductivities and mobilities. The zincblende segments are quantum wells orthogonal to the current path and our calculations indicate that an electron concentration of up to 4.6 × 10(18) cm(-3) can be trapped in these. The calculations also show that the room temperature conductivity is controlled by the longest zincblende segment, and that stochastic variations in this length lead to an order of magnitude variation in conductivity. The mobility shows an unexpected decrease for low doping levels, as well as an unusual temperature dependence that bear resemblance with polycrystalline semiconductors.},
  author       = {Wallentin, Jesper and Ek, Martin and Wallenberg, Reine and Samuelson, Lars and Borgström, Magnus},
  issn         = {1530-6992},
  language     = {eng},
  number       = {1},
  pages        = {151--155},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Electron Trapping in InP Nanowire FETs with Stacking Faults.},
  url          = {http://dx.doi.org/10.1021/nl203213d},
  volume       = {12},
  year         = {2012},
}