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Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Wu, Jun LU ; Lind, Erik LU ; Timm, Rainer LU ; Hjort, Martin LU ; Mikkelsen, Anders LU and Wernersson, Lars-Erik LU (2012) In Applied Physics Letters 100(13). p.3-132905
Abstract
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and

structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated

using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results

suggest that the interface traps around the conduction band edge are correlated to the As-oxide

amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide

determines the border trap density, hence the capacitance frequency dispersion. The comparison of

different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B

substrates... (More)
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and

structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated

using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results

suggest that the interface traps around the conduction band edge are correlated to the As-oxide

amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide

determines the border trap density, hence the capacitance frequency dispersion. The comparison of

different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B

substrates followed by an annealing procedure at 400 oC. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Interface, InAs, High k, MOS capacitors
in
Applied Physics Letters
volume
100
issue
13
pages
3 - 132905
publisher
American Institute of Physics
external identifiers
  • wos:000302230800053
  • scopus:84859527586
ISSN
0003-6951
DOI
10.1063/1.3698094
language
English
LU publication?
yes
id
c3c278e1-cd14-4e64-8394-b873445a2f58 (old id 2435560)
alternative location
http://link.aip.org/link/?APL/100/132905
date added to LUP
2012-04-10 09:51:12
date last changed
2017-10-22 03:22:54
@article{c3c278e1-cd14-4e64-8394-b873445a2f58,
  abstract     = {The influence of InAs orientations and high-k oxide deposition conditions on the electrical and<br/><br>
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated<br/><br>
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results<br/><br>
suggest that the interface traps around the conduction band edge are correlated to the As-oxide<br/><br>
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide<br/><br>
determines the border trap density, hence the capacitance frequency dispersion. The comparison of<br/><br>
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B<br/><br>
substrates followed by an annealing procedure at 400 oC.},
  author       = {Wu, Jun and Lind, Erik and Timm, Rainer and Hjort, Martin and Mikkelsen, Anders and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  keyword      = {Interface,InAs,High k,MOS capacitors},
  language     = {eng},
  number       = {13},
  pages        = {3--132905},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates},
  url          = {http://dx.doi.org/10.1063/1.3698094},
  volume       = {100},
  year         = {2012},
}