Advanced

Highly controlled InAs nanowires on Si(111) wafers by MOVPE

Gorji, Sepideh LU ; Johansson, Sofia LU ; Borg, Mattias LU ; Dick Thelander, Kimberly LU and Wernersson, Lars-Erik LU (2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In physica status solidi (c) 9(2).
Abstract
We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact... (More)
We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact and the InAs nanowires act as channel materials. [GRAPHICS] SEM image of part of epitaxially grown InAs nanowires on the InAs layer on 2" Si substrate. The scale bar is 50 mu m. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InAs, nanowire, MOSFET
in
physica status solidi (c)
volume
9
issue
2
publisher
Wiley-Blackwell
conference name
38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
external identifiers
  • wos:000301540900013
  • scopus:84856186467
ISSN
1862-6351
1610-1642
DOI
10.1002/pssc.201100258
language
English
LU publication?
yes
id
d038cae5-df7f-46e6-b84e-39bb4a79c614 (old id 2494900)
date added to LUP
2012-05-10 13:30:02
date last changed
2017-10-08 03:14:18
@inproceedings{d038cae5-df7f-46e6-b84e-39bb4a79c614,
  abstract     = {We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact and the InAs nanowires act as channel materials. [GRAPHICS] SEM image of part of epitaxially grown InAs nanowires on the InAs layer on 2" Si substrate. The scale bar is 50 mu m. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},
  author       = {Gorji, Sepideh and Johansson, Sofia and Borg, Mattias and Dick Thelander, Kimberly and Wernersson, Lars-Erik},
  booktitle    = {physica status solidi (c)},
  issn         = {1862-6351},
  keyword      = {InAs,nanowire,MOSFET},
  language     = {eng},
  number       = {2},
  publisher    = {Wiley-Blackwell},
  title        = {Highly controlled InAs nanowires on Si(111) wafers by MOVPE},
  url          = {http://dx.doi.org/10.1002/pssc.201100258},
  volume       = {9},
  year         = {2012},
}