High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
(2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353- Abstract
- RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high... (More)
- RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2494907
- author
- Johansson, Sofia LU ; Gorji, Sepideh LU ; Egard, Mikael LU ; Borg, Mattias LU ; Berg, Martin LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- high-k, annealing, InAs, high frequency, nanowire, MOSFET
- in
- Physica Status Solidi. C, Current Topics in Solid State Physics
- volume
- 9
- issue
- 2
- pages
- 350 - 353
- publisher
- John Wiley & Sons Inc.
- conference name
- 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
- conference location
- Berlin, Germany
- conference dates
- 2011-05-22 - 2011-05-26
- external identifiers
-
- wos:000301540900049
- scopus:84856155859
- ISSN
- 1610-1634
- DOI
- 10.1002/pssc.201100249
- language
- English
- LU publication?
- yes
- id
- 32f71dc4-ea50-44b9-a42b-043d068986f6 (old id 2494907)
- date added to LUP
- 2016-04-01 09:59:48
- date last changed
- 2024-01-04 01:53:46
@article{32f71dc4-ea50-44b9-a42b-043d068986f6, abstract = {{RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}}, author = {{Johansson, Sofia and Gorji, Sepideh and Egard, Mikael and Borg, Mattias and Berg, Martin and Wernersson, Lars-Erik and Lind, Erik}}, issn = {{1610-1634}}, keywords = {{high-k; annealing; InAs; high frequency; nanowire; MOSFET}}, language = {{eng}}, number = {{2}}, pages = {{350--353}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi. C, Current Topics in Solid State Physics}}, title = {{High frequency vertical InAs nanowire MOSFETs integrated on Si substrates}}, url = {{http://dx.doi.org/10.1002/pssc.201100249}}, doi = {{10.1002/pssc.201100249}}, volume = {{9}}, year = {{2012}}, }