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High frequency vertical InAs nanowire MOSFETs integrated on Si substrates

Johansson, Sofia LU ; Gorji, Sepideh LU ; Egard, Mikael LU ; Borg, Mattias LU ; Berg, Martin LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353
Abstract
RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high... (More)
RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
high-k, annealing, InAs, high frequency, nanowire, MOSFET
in
Physica Status Solidi. C, Current Topics in Solid State Physics
volume
9
issue
2
pages
350 - 353
publisher
John Wiley & Sons
conference name
38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
external identifiers
  • WOS:000301540900049
  • Scopus:84856155859
ISSN
1610-1634
DOI
10.1002/pssc.201100249
language
English
LU publication?
yes
id
32f71dc4-ea50-44b9-a42b-043d068986f6 (old id 2494907)
date added to LUP
2012-05-10 13:33:22
date last changed
2017-01-01 08:22:57
@article{32f71dc4-ea50-44b9-a42b-043d068986f6,
  abstract     = {RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},
  author       = {Johansson, Sofia and Gorji, Sepideh and Egard, Mikael and Borg, Mattias and Berg, Martin and Wernersson, Lars-Erik and Lind, Erik},
  issn         = {1610-1634},
  keyword      = {high-k,annealing,InAs,high frequency,nanowire,MOSFET},
  language     = {eng},
  number       = {2},
  pages        = {350--353},
  publisher    = {John Wiley & Sons},
  series       = {Physica Status Solidi. C, Current Topics in Solid State Physics},
  title        = {High frequency vertical InAs nanowire MOSFETs integrated on Si substrates},
  url          = {http://dx.doi.org/10.1002/pssc.201100249},
  volume       = {9},
  year         = {2012},
}