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Novel nanoelectronic triodes and logic devices with TBJs

Xu, Hongqi LU ; Shorubalko, Ivan LU ; Wallin, Daniel LU ; Maximov, Ivan LU ; Omling, Pär LU ; Samuelson, Lars LU and Seifert, Werner LU (2004) In IEEE Electron Device Letters 25(4). p.164-166
Abstract
In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ballistic devices, logic gates, nanoelectronics, ballistic junctions (TBJs), three-terminal, diodes, triodes
in
IEEE Electron Device Letters
volume
25
issue
4
pages
164 - 166
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000220478000002
  • scopus:1942424163
ISSN
0741-3106
DOI
10.1109/LED.2004.824841
language
English
LU publication?
yes
id
b0c66aa8-6866-48f8-94f3-adcc452db4cc (old id 283646)
date added to LUP
2007-11-05 16:10:52
date last changed
2017-01-01 06:50:15
@article{b0c66aa8-6866-48f8-94f3-adcc452db4cc,
  abstract     = {In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.},
  author       = {Xu, Hongqi and Shorubalko, Ivan and Wallin, Daniel and Maximov, Ivan and Omling, Pär and Samuelson, Lars and Seifert, Werner},
  issn         = {0741-3106},
  keyword      = {ballistic devices,logic gates,nanoelectronics,ballistic junctions (TBJs),three-terminal,diodes,triodes},
  language     = {eng},
  number       = {4},
  pages        = {164--166},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Novel nanoelectronic triodes and logic devices with TBJs},
  url          = {http://dx.doi.org/10.1109/LED.2004.824841},
  volume       = {25},
  year         = {2004},
}