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2024
Mark TFET Circuit Configurations Operating below 60 mV/dec
Rangasamy, Gautham ^LU ; Zhu, Zhongyunshen ^LU ; Fhager, Lars Ohlsson ^LU and Wernersson, Lars Erik ^LU (2024) In IEEE Transactions on Nanotechnology 23. p.441-447
- Contribution to journal › Article
Mark Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Castillo, Ragnar Ferrand Drake Del ; Chen, Ding Yuan ; Chen, Jr Tai ; Thorsell, Mattias ; Darakchieva, Vanya ^LU and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(6). p.3596-3602
- Contribution to journal › Article
2022
Mark Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
Mamidala, Saketh, Ram ^LU ; Svensson, Johannes ^LU ; Skog, Sebastian ; Johannesson, Sofie and Wernersson, Lars-Erik ^LU (2022) In IEEE Electron Device Letters 43(12). p.2033-2033
- Contribution to journal › Article
Mark A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System
Au, Ngoc Duc ^LU ; Nguyen, Danh Manh ; Nhut, Tan Doan and Seo, Chulhun (2022) In IEEE Transactions on Microwave Theory and Techniques 70(10). p.4502-4510
- Contribution to journal › Article
Mark Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
Andric, Stefan ^LU ; Lindelow, Fredrik ^LU ; Fhager, Lars Ohlsson ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2022) In IEEE Transactions on Microwave Theory and Techniques 70(2). p.1284-1291
- Contribution to journal › Article
2021
Mark Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
Andric, Stefan ^LU ; Ohlsson Fhager, Lars ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Transactions on Nanotechnology 20. p.434-440
- Contribution to journal › Article
Mark Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka ^LU ; Andric, Stefan ^LU ; Svensson, Johannes ^LU ; Ram, Mamidala Saketh ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Electron Device Letters 42(11). p.1596-1598
- Contribution to journal › Article
2019
Mark Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
Jönsson, Adam ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2019) 64th IEEE International Electron Devices Meeting p.1-39
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2019) In IEEE Journal of the Electron Devices Society 7. p.70-75
- Contribution to journal › Article
2018
Mark A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
Netsu, Seiko ^LU ; Hellenbrand, Markus ^LU ; Zota, Cezar B. ^LU ; Miyamoto, Yasuyuki and Lind, Erik ^LU (2018) In IEEE Journal of the Electron Devices Society 6. p.408-412
- Contribution to journal › Article

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