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1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors

Delker, Collin J.; Kim, Seongmin; Borg, Mattias LU ; Wernersson, Lars-Erik LU and Janes, David B. (2012) In IEEE Transactions on Electron Devices 59(7). p.1980-1987
Abstract
1/f noise is studied in dual-gated InAs nanowire transistors consisting of an omega top gate with high-k atomic layer deposited dielectric and silicon dioxide to substrate back gate. Noise spectra at varying gate bias combinations are compared from devices with differing top-gate lengths to separate the noise contributions of the top-gated channel from the ungated access portion, including the metal-nanowire contacts. For a given device geometry, it is possible to bias the device into four different regimes where the resistance and the noise amplitude can each be independently dominated by either the channel or the access/contact regions. When the device is fully in the on state, the access/contact regions dominate both resistance and... (More)
1/f noise is studied in dual-gated InAs nanowire transistors consisting of an omega top gate with high-k atomic layer deposited dielectric and silicon dioxide to substrate back gate. Noise spectra at varying gate bias combinations are compared from devices with differing top-gate lengths to separate the noise contributions of the top-gated channel from the ungated access portion, including the metal-nanowire contacts. For a given device geometry, it is possible to bias the device into four different regimes where the resistance and the noise amplitude can each be independently dominated by either the channel or the access/contact regions. When the device is fully in the on state, the access/contact regions dominate both resistance and noise. When the device is operating near or below threshold, the channel dominates resistance and noise. For the lowest amount of overall 1/f noise, most of the nanowire should be covered by the top gate, minimizing the access region length. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Indium Arsenide, low-frequency noise, nanowire FETs
in
IEEE Transactions on Electron Devices
volume
59
issue
7
pages
1980 - 1987
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000305622800024
  • scopus:84862701872
ISSN
0018-9383
DOI
10.1109/TED.2012.2194150
language
English
LU publication?
yes
id
2d1eadfa-9645-4405-9905-9717ac5474fc (old id 2883871)
date added to LUP
2012-07-25 10:45:49
date last changed
2017-04-23 03:53:45
@article{2d1eadfa-9645-4405-9905-9717ac5474fc,
  abstract     = {1/f noise is studied in dual-gated InAs nanowire transistors consisting of an omega top gate with high-k atomic layer deposited dielectric and silicon dioxide to substrate back gate. Noise spectra at varying gate bias combinations are compared from devices with differing top-gate lengths to separate the noise contributions of the top-gated channel from the ungated access portion, including the metal-nanowire contacts. For a given device geometry, it is possible to bias the device into four different regimes where the resistance and the noise amplitude can each be independently dominated by either the channel or the access/contact regions. When the device is fully in the on state, the access/contact regions dominate both resistance and noise. When the device is operating near or below threshold, the channel dominates resistance and noise. For the lowest amount of overall 1/f noise, most of the nanowire should be covered by the top gate, minimizing the access region length.},
  author       = {Delker, Collin J. and Kim, Seongmin and Borg, Mattias and Wernersson, Lars-Erik and Janes, David B.},
  issn         = {0018-9383},
  keyword      = {Indium Arsenide,low-frequency noise,nanowire FETs},
  language     = {eng},
  number       = {7},
  pages        = {1980--1987},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors},
  url          = {http://dx.doi.org/10.1109/TED.2012.2194150},
  volume       = {59},
  year         = {2012},
}