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Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study

Borgström, Magnus LU ; Deppert, Knut LU ; Samuelson, Lars LU and Seifert, Werner LU (2004) In Journal of Crystal Growth 260(1-2). p.18-22
Abstract
We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a... (More)
We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
materials, semiconducting III-V, nanostructures, metalorganic vapor phase epitaxy
in
Journal of Crystal Growth
volume
260
issue
1-2
pages
18 - 22
publisher
Elsevier
external identifiers
  • wos:000187730000004
  • scopus:0242523149
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2003.08.009
language
English
LU publication?
yes
id
ee26dd43-70ad-4435-87a4-fbdf367ae2e9 (old id 291014)
date added to LUP
2007-10-17 11:08:12
date last changed
2017-11-19 04:13:31
@article{ee26dd43-70ad-4435-87a4-fbdf367ae2e9,
  abstract     = {We have investigated the Au-catalyzed GaAs &lt;111 &gt; B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface.},
  author       = {Borgström, Magnus and Deppert, Knut and Samuelson, Lars and Seifert, Werner},
  issn         = {0022-0248},
  keyword      = {materials,semiconducting III-V,nanostructures,metalorganic vapor phase epitaxy},
  language     = {eng},
  number       = {1-2},
  pages        = {18--22},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2003.08.009},
  volume       = {260},
  year         = {2004},
}