Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
(2012) ICPS 2012
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3160099
- author
- Ganjipour, Bahram LU ; Borg, Mattias LU ; Ek, Martin LU ; Dick Thelander, Kimberly LU ; Pistol, Mats-Erik LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU
- organization
- publishing date
- 2012
- type
- Contribution to conference
- publication status
- published
- subject
- conference name
- ICPS 2012
- conference location
- Zürich, Switzerland
- conference dates
- 2012-07-29 - 2012-08-03
- language
- English
- LU publication?
- yes
- id
- 2a0fd859-710e-4269-8258-3025216dc805 (old id 3160099)
- date added to LUP
- 2016-04-04 13:05:29
- date last changed
- 2018-11-21 21:12:08
@misc{2a0fd859-710e-4269-8258-3025216dc805, author = {{Ganjipour, Bahram and Borg, Mattias and Ek, Martin and Dick Thelander, Kimberly and Pistol, Mats-Erik and Wernersson, Lars-Erik and Thelander, Claes}}, language = {{eng}}, title = {{Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor}}, year = {{2012}}, }