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In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Egard, Mikael LU ; Ärlelid, Mats LU ; Ohlsson, Lars LU ; Borg, Mattias LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2012) In IEEE Electron Device Letters 33(7). p.970-972
Abstract
We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
generator, pulse, metal-oxide-semiconductor field-effect transistor (MOSFET), metal-organic chemical vapor deposition regrowth, Impulse radio, InGaAs, resonant tunneling diode (RTD), ultrawideband, wavelet
in
IEEE Electron Device Letters
volume
33
issue
7
pages
970 - 972
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000305835300018
  • scopus:84862850057
ISSN
0741-3106
DOI
10.1109/LED.2012.2194132
language
English
LU publication?
yes
id
6f784e32-365f-4794-88c6-fa819e7dea86 (old id 3001485)
date added to LUP
2012-08-21 11:14:15
date last changed
2017-09-10 04:16:51
@article{6f784e32-365f-4794-88c6-fa819e7dea86,
  abstract     = {We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.},
  author       = {Egard, Mikael and Ärlelid, Mats and Ohlsson, Lars and Borg, Mattias and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {generator,pulse,metal-oxide-semiconductor field-effect transistor (MOSFET),metal-organic chemical vapor deposition regrowth,Impulse radio,InGaAs,resonant tunneling diode (RTD),ultrawideband,wavelet},
  language     = {eng},
  number       = {7},
  pages        = {970--972},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator},
  url          = {http://dx.doi.org/10.1109/LED.2012.2194132},
  volume       = {33},
  year         = {2012},
}