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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP

Maximov, Ivan LU ; Carlberg, Patrick LU ; Shorubalko, Ivan LU ; Wallin, Daniel LU ; Sarwe, Eva-Lena LU ; Beck, Marc LU ; Graczyk, Mariusz LU ; Seifert, Werner LU ; Xu, Hongqi LU and Montelius, Lars LU , et al. (2003) In Microelectronic Engineering 67-8. p.196-202
Abstract
We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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publication status
published
subject
keywords
nanoimprint lithography, GaInAs/InP, three-terminal ballistic junction
in
Microelectronic Engineering
volume
67-8
pages
196 - 202
publisher
Elsevier
external identifiers
  • wos:000183842100027
  • scopus:0038359142
ISSN
1873-5568
DOI
10.1016/S0167-9317(03)00071-6
language
English
LU publication?
yes
id
af8c0ee5-da23-4cac-bf50-619cc1848a54 (old id 307038)
date added to LUP
2007-09-18 08:40:33
date last changed
2018-01-07 06:00:39
@article{af8c0ee5-da23-4cac-bf50-619cc1848a54,
  abstract     = {We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.},
  author       = {Maximov, Ivan and Carlberg, Patrick and Shorubalko, Ivan and Wallin, Daniel and Sarwe, Eva-Lena and Beck, Marc and Graczyk, Mariusz and Seifert, Werner and Xu, Hongqi and Montelius, Lars and Samuelson, Lars},
  issn         = {1873-5568},
  keyword      = {nanoimprint lithography,GaInAs/InP,three-terminal ballistic junction},
  language     = {eng},
  pages        = {196--202},
  publisher    = {Elsevier},
  series       = {Microelectronic Engineering},
  title        = {Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP},
  url          = {http://dx.doi.org/10.1016/S0167-9317(03)00071-6},
  volume       = {67-8},
  year         = {2003},
}