Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
(2012) In Applied Physics Letters 101(10).- Abstract
- We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb... (More)
- We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749283] (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3191226
- author
- Ganjipour, Bahram LU ; Ek, Martin LU ; Borg, Mattias LU ; Dick Thelander, Kimberly LU ; Pistol, Mats-Erik LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 101
- issue
- 10
- article number
- 103501
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000309072800078
- scopus:84866022817
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4749283
- language
- English
- LU publication?
- yes
- id
- 87acbe6c-38c8-49cf-a165-27962e223043 (old id 3191226)
- date added to LUP
- 2016-04-01 10:40:39
- date last changed
- 2023-11-10 02:29:45
@article{87acbe6c-38c8-49cf-a165-27962e223043, abstract = {{We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749283]}}, author = {{Ganjipour, Bahram and Ek, Martin and Borg, Mattias and Dick Thelander, Kimberly and Pistol, Mats-Erik and Wernersson, Lars-Erik and Thelander, Claes}}, issn = {{0003-6951}}, language = {{eng}}, number = {{10}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires}}, url = {{http://dx.doi.org/10.1063/1.4749283}}, doi = {{10.1063/1.4749283}}, volume = {{101}}, year = {{2012}}, }