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Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates

Astromskas, Gvidas LU ; Borg, Mattias LU and Wernersson, Lars-Erik LU (2012) In Journal of Vacuum Science and Technology B 30(5).
Abstract
Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
atomic force microscopy, buffer layers, Hall effect, III-V, semiconductors, indium compounds, MOCVD, nucleation, semiconductor, epitaxial layers, semiconductor growth, vapour phase epitaxial growth, X-ray diffraction
in
Journal of Vacuum Science and Technology B
volume
30
issue
5
publisher
American Institute of Physics
external identifiers
  • wos:000309073500006
  • scopus:84866519620
ISSN
1520-8567
DOI
10.1116/1.4739425
language
English
LU publication?
yes
id
d65e047c-88ad-47f5-9891-711419b8679a (old id 3191331)
date added to LUP
2012-11-27 10:31:25
date last changed
2017-09-03 03:26:39
@article{d65e047c-88ad-47f5-9891-711419b8679a,
  abstract     = {Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.},
  articleno    = {051202},
  author       = {Astromskas, Gvidas and Borg, Mattias and Wernersson, Lars-Erik},
  issn         = {1520-8567},
  keyword      = {atomic force microscopy,buffer layers,Hall effect,III-V,semiconductors,indium compounds,MOCVD,nucleation,semiconductor,epitaxial layers,semiconductor growth,vapour phase epitaxial growth,X-ray diffraction},
  language     = {eng},
  number       = {5},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates},
  url          = {http://dx.doi.org/10.1116/1.4739425},
  volume       = {30},
  year         = {2012},
}