Self-Seeded Axio-Radial InAs-InAs1-xPx Nanowire Heterostructures beyond "common" VLS Growth
Mandl, Bernhard LU ; Keplinger, Mario ; Messing, Maria E. LU ; Kriegner, Dominik ; Wallenberg, Reine LU ; Samuelson, Lars LU ; Bauer, Günther ; Stangl, Julian ; Holý, Václav and Deppert, Knut LU
(2018)
In Nano Letters
18(1).
p.144-151
- Abstract
Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an... (More)
Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs1-xPx material system. We show how the dimensions and composition of such axio-radial nanowire heterostructures can be designed including the formation of a "pseudo-superlattice" consisting of five separate InAs1-xPx segments with varying length. The growth of axio-radial nanowire heterostructures offers an exciting platform for novel nanowire structures applicable for fundamental studies as well as nanowire devices. The growth concept for axio-radial nanowire heterostructures is expected to be fully compatible with Si substrates.
(Less)
- author
- Mandl, Bernhard
LU
; Keplinger, Mario
; Messing, Maria E.
LU
; Kriegner, Dominik
; Wallenberg, Reine
LU
; Samuelson, Lars
LU
; Bauer, Günther
; Stangl, Julian
; Holý, Václav
and Deppert, Knut
LU
- organization
- publishing date
- 2018-01-10
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- axio-radial heterostructure, epitaxy, nanowire growth mechanism, Nanowires
- in
- Nano Letters
- volume
- 18
- issue
- 1
- pages
- 8 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85040313365
- pmid:29257691
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.7b03668
- language
- English
- LU publication?
- yes
- id
- 31dbde95-728c-475e-8c18-2feecde2c36b
- date added to LUP
- 2018-01-22 12:02:24
- date last changed
- 2024-03-31 23:51:23
@article{31dbde95-728c-475e-8c18-2feecde2c36b,
abstract = {{<p>Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs<sub>1-x</sub>P<sub>x</sub> material system. We show how the dimensions and composition of such axio-radial nanowire heterostructures can be designed including the formation of a "pseudo-superlattice" consisting of five separate InAs<sub>1-x</sub>P<sub>x</sub> segments with varying length. The growth of axio-radial nanowire heterostructures offers an exciting platform for novel nanowire structures applicable for fundamental studies as well as nanowire devices. The growth concept for axio-radial nanowire heterostructures is expected to be fully compatible with Si substrates.</p>}},
author = {{Mandl, Bernhard and Keplinger, Mario and Messing, Maria E. and Kriegner, Dominik and Wallenberg, Reine and Samuelson, Lars and Bauer, Günther and Stangl, Julian and Holý, Václav and Deppert, Knut}},
issn = {{1530-6984}},
keywords = {{axio-radial heterostructure; epitaxy; nanowire growth mechanism; Nanowires}},
language = {{eng}},
month = {{01}},
number = {{1}},
pages = {{144--151}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Self-Seeded Axio-Radial InAs-InAs<sub>1-x</sub>P<sub>x</sub> Nanowire Heterostructures beyond "common" VLS Growth}},
url = {{http://dx.doi.org/10.1021/acs.nanolett.7b03668}},
doi = {{10.1021/acs.nanolett.7b03668}},
volume = {{18}},
year = {{2018}},
}