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Self-Seeded Axio-Radial InAs-InAs1-xPx Nanowire Heterostructures beyond "common" VLS Growth

Mandl, Bernhard LU ; Keplinger, Mario; Messing, Maria E. LU ; Kriegner, Dominik; Wallenberg, Reine LU ; Samuelson, Lars LU ; Bauer, Günther; Stangl, Julian; Holý, Václav and Deppert, Knut LU (2018) In Nano Letters 18(1). p.144-151
Abstract

Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an... (More)

Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs1-xPx material system. We show how the dimensions and composition of such axio-radial nanowire heterostructures can be designed including the formation of a "pseudo-superlattice" consisting of five separate InAs1-xPx segments with varying length. The growth of axio-radial nanowire heterostructures offers an exciting platform for novel nanowire structures applicable for fundamental studies as well as nanowire devices. The growth concept for axio-radial nanowire heterostructures is expected to be fully compatible with Si substrates.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
axio-radial heterostructure, epitaxy, nanowire growth mechanism, Nanowires
in
Nano Letters
volume
18
issue
1
pages
8 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85040313365
ISSN
1530-6984
DOI
language
English
LU publication?
yes
id
31dbde95-728c-475e-8c18-2feecde2c36b
date added to LUP
2018-01-22 12:02:24
date last changed
2018-05-29 09:24:44
@article{31dbde95-728c-475e-8c18-2feecde2c36b,
  abstract     = {<p>Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs<sub>1-x</sub>P<sub>x</sub> material system. We show how the dimensions and composition of such axio-radial nanowire heterostructures can be designed including the formation of a "pseudo-superlattice" consisting of five separate InAs<sub>1-x</sub>P<sub>x</sub> segments with varying length. The growth of axio-radial nanowire heterostructures offers an exciting platform for novel nanowire structures applicable for fundamental studies as well as nanowire devices. The growth concept for axio-radial nanowire heterostructures is expected to be fully compatible with Si substrates.</p>},
  author       = {Mandl, Bernhard and Keplinger, Mario and Messing, Maria E. and Kriegner, Dominik and Wallenberg, Reine and Samuelson, Lars and Bauer, Günther and Stangl, Julian and Holý, Václav and Deppert, Knut},
  issn         = {1530-6984},
  keyword      = {axio-radial heterostructure,epitaxy,nanowire growth mechanism,Nanowires},
  language     = {eng},
  month        = {01},
  number       = {1},
  pages        = {144--151},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Self-Seeded Axio-Radial InAs-InAs<sub>1-x</sub>P<sub>x</sub> Nanowire Heterostructures beyond "common" VLS Growth},
  url          = {http://dx.doi.org/},
  volume       = {18},
  year         = {2018},
}