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A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes

Suhara, M; Ooki, S; Wernersson, Lars-Erik LU ; Seifert, Werner LU ; Samuelson, Lars LU and Okumura, T (2002) ISCS 2001 In Compound Semiconductors 2001 (Institute of Physics Conference Series) p.363-367
Abstract
In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Compound Semiconductors 2001 (Institute of Physics Conference Series)
issue
170
pages
363 - 367
publisher
IOP Publishing
conference name
ISCS 2001
external identifiers
  • wos:000179011200059
ISSN
0951-3248
language
English
LU publication?
yes
id
18a5ddf1-75c6-4ee3-af02-a99a4056cb6a (old id 324575)
date added to LUP
2007-11-15 09:38:13
date last changed
2016-04-16 04:56:40
@inproceedings{18a5ddf1-75c6-4ee3-af02-a99a4056cb6a,
  abstract     = {In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].},
  author       = {Suhara, M and Ooki, S and Wernersson, Lars-Erik and Seifert, Werner and Samuelson, Lars and Okumura, T},
  booktitle    = {Compound Semiconductors 2001 (Institute of Physics Conference Series)},
  issn         = {0951-3248},
  language     = {eng},
  number       = {170},
  pages        = {363--367},
  publisher    = {IOP Publishing},
  title        = {A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes},
  year         = {2002},
}