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Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

Ohlsson, Jonas LU ; Björk, Mikael LU ; Persson, Ann LU ; Thelander, Claes LU ; Wallenberg, Reine LU ; Magnusson, Martin LU ; Deppert, Knut LU and Samuelson, Lars LU (2002) Tenth International Conference on Modulated Semiconductor Structures. MSS 10 In Physica E: Low-dimensional Systems and Nanostructures 13(2-4). p.1126-1130
Abstract
Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
III-V, one-dimensional transport, nano-whiskers, heterostructures
in
Physica E: Low-dimensional Systems and Nanostructures
volume
13
issue
2-4
pages
1126 - 1130
publisher
Elsevier
conference name
Tenth International Conference on Modulated Semiconductor Structures. MSS 10
external identifiers
  • wos:000176869100241
  • scopus:0036493103
ISSN
1386-9477
DOI
10.1016/S1386-9477(02)00318-1
language
English
LU publication?
yes
id
1ada88f9-3d7d-40da-b32f-e6c6967a0742 (old id 326338)
date added to LUP
2007-11-28 12:57:44
date last changed
2017-03-12 04:14:25
@inproceedings{1ada88f9-3d7d-40da-b32f-e6c6967a0742,
  abstract     = {Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.},
  author       = {Ohlsson, Jonas and Björk, Mikael and Persson, Ann and Thelander, Claes and Wallenberg, Reine and Magnusson, Martin and Deppert, Knut and Samuelson, Lars},
  booktitle    = {Physica E: Low-dimensional Systems and Nanostructures},
  issn         = {1386-9477},
  keyword      = {III-V,one-dimensional transport,nano-whiskers,heterostructures},
  language     = {eng},
  number       = {2-4},
  pages        = {1126--1130},
  publisher    = {Elsevier},
  title        = {Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures},
  url          = {http://dx.doi.org/10.1016/S1386-9477(02)00318-1},
  volume       = {13},
  year         = {2002},
}