Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures
Ohlsson, Jonas LU ; Björk, Mikael LU ; Persson, Ann LU ; Thelander, Claes LU ; Wallenberg, Reine LU ; Magnusson, Martin LU ; Deppert, Knut LU
and Samuelson, Lars
LU
(2002)
Tenth International Conference on Modulated Semiconductor Structures. MSS 10
13(2-4).
p.1126-1130
- Abstract
- Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/326338
- author
- Ohlsson, Jonas
LU
; Björk, Mikael
LU
; Persson, Ann
LU
; Thelander, Claes
LU
; Wallenberg, Reine
LU
; Magnusson, Martin
LU
; Deppert, Knut
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- III-V, one-dimensional transport, nano-whiskers, heterostructures
- host publication
- Physica E: Low-dimensional Systems and Nanostructures
- volume
- 13
- issue
- 2-4
- pages
- 1126 - 1130
- publisher
- Elsevier
- conference name
- Tenth International Conference on Modulated Semiconductor Structures. MSS 10
- conference location
- Linz, Austria
- conference dates
- 2001-07-23 - 2001-07-27
- external identifiers
-
- wos:000176869100241
- scopus:0036493103
- ISSN
- 1386-9477
- DOI
- 10.1016/S1386-9477(02)00318-1
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 1ada88f9-3d7d-40da-b32f-e6c6967a0742 (old id 326338)
- date added to LUP
- 2016-04-01 17:00:48
- date last changed
- 2022-04-07 20:15:26
@inproceedings{1ada88f9-3d7d-40da-b32f-e6c6967a0742,
abstract = {{Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.}},
author = {{Ohlsson, Jonas and Björk, Mikael and Persson, Ann and Thelander, Claes and Wallenberg, Reine and Magnusson, Martin and Deppert, Knut and Samuelson, Lars}},
booktitle = {{Physica E: Low-dimensional Systems and Nanostructures}},
issn = {{1386-9477}},
keywords = {{III-V; one-dimensional transport; nano-whiskers; heterostructures}},
language = {{eng}},
number = {{2-4}},
pages = {{1126--1130}},
publisher = {{Elsevier}},
title = {{Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures}},
url = {{http://dx.doi.org/10.1016/S1386-9477(02)00318-1}},
doi = {{10.1016/S1386-9477(02)00318-1}},
volume = {{13}},
year = {{2002}},
}