Advanced

Fabrication of Si-based nanoimprint stamps with sub-20 nm features

Maximov, Ivan LU ; Sarwe, Eva-Lena LU ; Beck, Marc LU ; Deppert, Knut LU ; Graczyk, Mariusz LU ; Magnusson, Martin LU and Montelius, Lars LU (2002) Micro and Nano Engineering 2001 In MICROELECTRONIC ENGINEERING 61-2. p.449-454
Abstract
We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of... (More)
We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
aerosols, electron beam lithography, nanoimprint, etching
in
MICROELECTRONIC ENGINEERING
volume
61-2
pages
449 - 454
publisher
Elsevier
conference name
Micro and Nano Engineering 2001
external identifiers
  • wos:000176594700060
  • scopus:0036643783
ISSN
0167-9317
1873-5568
DOI
10.1016/S0167-9317(02)00488-4
language
English
LU publication?
yes
id
efd555fd-57dc-447a-9519-10a89b357c7b (old id 334092)
date added to LUP
2007-11-28 11:28:02
date last changed
2017-07-30 03:32:07
@inproceedings{efd555fd-57dc-447a-9519-10a89b357c7b,
  abstract     = {We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V.},
  author       = {Maximov, Ivan and Sarwe, Eva-Lena and Beck, Marc and Deppert, Knut and Graczyk, Mariusz and Magnusson, Martin and Montelius, Lars},
  booktitle    = {MICROELECTRONIC ENGINEERING},
  issn         = {0167-9317},
  keyword      = {aerosols,electron beam lithography,nanoimprint,etching},
  language     = {eng},
  pages        = {449--454},
  publisher    = {Elsevier},
  title        = {Fabrication of Si-based nanoimprint stamps with sub-20 nm features},
  url          = {http://dx.doi.org/10.1016/S0167-9317(02)00488-4},
  volume       = {61-2},
  year         = {2002},
}