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A novel frequency-multiplication device based on three-terminal ballistic junction

Shorubalko, Ivan LU ; Xu, Hongqi LU ; Maximov, Ivan LU ; Nilsson, D; Omling, Pär LU ; Samuelson, Lars LU and Seifert, Werner LU (2002) In IEEE Electron Device Letters 23(7). p.377-379
Abstract
In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
three-terminal ballistic, ballistic devices, frequency-multiplication, junctions
in
IEEE Electron Device Letters
volume
23
issue
7
pages
377 - 379
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000176491000001
  • scopus:0036646338
ISSN
0741-3106
DOI
10.1109/LED.2002.1015202
language
English
LU publication?
yes
id
7e8a7bfb-f01f-4632-94bd-5b58de291658 (old id 334170)
date added to LUP
2007-11-13 15:18:21
date last changed
2017-12-03 03:39:15
@article{7e8a7bfb-f01f-4632-94bd-5b58de291658,
  abstract     = {In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.},
  author       = {Shorubalko, Ivan and Xu, Hongqi and Maximov, Ivan and Nilsson, D and Omling, Pär and Samuelson, Lars and Seifert, Werner},
  issn         = {0741-3106},
  keyword      = {three-terminal ballistic,ballistic devices,frequency-multiplication,junctions},
  language     = {eng},
  number       = {7},
  pages        = {377--379},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {A novel frequency-multiplication device based on three-terminal ballistic junction},
  url          = {http://dx.doi.org/10.1109/LED.2002.1015202},
  volume       = {23},
  year         = {2002},
}