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Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm

Wernersson, Lars-Erik LU ; Georgsson, K; Gustafsson, Anders LU ; Löfgren, Anneli LU ; Montelius, Lars LU ; Nilsson, N; Pettersson, H; Seifert, Werner LU ; Samuelson, Lars LU and Malm, Jan-Olle LU (2002) In Journal of Vacuum Science and Technology B 20(2). p.580-589
Abstract
A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in... (More)
A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science and Technology B
volume
20
issue
2
pages
580 - 589
publisher
American Institute of Physics
external identifiers
  • wos:000175168800014
  • scopus:0036506062
ISSN
1520-8567
DOI
10.1116/1.1454128
language
English
LU publication?
yes
id
7e5449af-0fb1-4f48-b2ef-c001829f5621 (old id 339874)
date added to LUP
2007-11-09 15:42:38
date last changed
2017-01-01 04:30:07
@article{7e5449af-0fb1-4f48-b2ef-c001829f5621,
  abstract     = {A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy.},
  author       = {Wernersson, Lars-Erik and Georgsson, K and Gustafsson, Anders and Löfgren, Anneli and Montelius, Lars and Nilsson, N and Pettersson, H and Seifert, Werner and Samuelson, Lars and Malm, Jan-Olle},
  issn         = {1520-8567},
  language     = {eng},
  number       = {2},
  pages        = {580--589},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm},
  url          = {http://dx.doi.org/10.1116/1.1454128},
  volume       = {20},
  year         = {2002},
}