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One-dimensional steeplechase for electrons realized

Björk, Mikael LU ; Ohlsson, Jonas LU ; Sass, T; Persson, Ann LU ; Thelander, Claes LU ; Magnusson, Martin LU ; Deppert, Knut LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2002) In Nano Letters 2(2). p.87-89
Abstract
We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
2
issue
2
pages
87 - 89
publisher
The American Chemical Society
external identifiers
  • wos:000174078400003
  • scopus:0003072296
ISSN
1530-6992
DOI
10.1021/nl010099n
language
English
LU publication?
yes
id
f978929c-bbc4-45c3-9cb2-e90d62859ecf (old id 342756)
date added to LUP
2007-08-10 09:53:17
date last changed
2017-12-10 04:26:50
@article{f978929c-bbc4-45c3-9cb2-e90d62859ecf,
  abstract     = {We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.},
  author       = {Björk, Mikael and Ohlsson, Jonas and Sass, T and Persson, Ann and Thelander, Claes and Magnusson, Martin and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  number       = {2},
  pages        = {87--89},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {One-dimensional steeplechase for electrons realized},
  url          = {http://dx.doi.org/10.1021/nl010099n},
  volume       = {2},
  year         = {2002},
}