One-dimensional heterostructures in semiconductor nanowhiskers
Björk, Mikael LU ; Ohlsson, Jonas LU ; Sass, T ; Persson, Ann LU ; Thelander, Claes LU ; Magnusson, Martin LU ; Deppert, Knut LU
; Wallenberg, Reine
LU
and Samuelson, Lars
LU
(2002)
In Applied Physics Letters
80(6).
p.1058-1060
- Abstract
- We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/344264
- author
- Björk, Mikael
LU
; Ohlsson, Jonas
LU
; Sass, T
; Persson, Ann
LU
; Thelander, Claes
LU
; Magnusson, Martin
LU
; Deppert, Knut
LU
; Wallenberg, Reine
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 80
- issue
- 6
- pages
- 1058 - 1060
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000173612900052
- scopus:79955991177
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1447312
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- bdcbd994-e5c2-4576-978d-6e79e7fa5de2 (old id 344264)
- date added to LUP
- 2016-04-01 12:15:00
- date last changed
- 2022-02-26 03:57:27
@article{bdcbd994-e5c2-4576-978d-6e79e7fa5de2,
abstract = {{We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.}},
author = {{Björk, Mikael and Ohlsson, Jonas and Sass, T and Persson, Ann and Thelander, Claes and Magnusson, Martin and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars}},
issn = {{0003-6951}},
language = {{eng}},
number = {{6}},
pages = {{1058--1060}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{One-dimensional heterostructures in semiconductor nanowhiskers}},
url = {{http://dx.doi.org/10.1063/1.1447312}},
doi = {{10.1063/1.1447312}},
volume = {{80}},
year = {{2002}},
}