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One-dimensional heterostructures in semiconductor nanowhiskers

Björk, Mikael LU ; Ohlsson, Jonas LU ; Sass, T; Persson, Ann LU ; Thelander, Claes LU ; Magnusson, Martin LU ; Deppert, Knut LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2002) In Applied Physics Letters 80(6). p.1058-1060
Abstract
We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
80
issue
6
pages
1058 - 1060
publisher
American Institute of Physics
external identifiers
  • wos:000173612900052
  • scopus:79955991177
ISSN
0003-6951
DOI
10.1063/1.1447312
language
English
LU publication?
yes
id
bdcbd994-e5c2-4576-978d-6e79e7fa5de2 (old id 344264)
date added to LUP
2007-08-10 10:43:01
date last changed
2017-12-10 03:50:13
@article{bdcbd994-e5c2-4576-978d-6e79e7fa5de2,
  abstract     = {We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.},
  author       = {Björk, Mikael and Ohlsson, Jonas and Sass, T and Persson, Ann and Thelander, Claes and Magnusson, Martin and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {6},
  pages        = {1058--1060},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {One-dimensional heterostructures in semiconductor nanowhiskers},
  url          = {http://dx.doi.org/10.1063/1.1447312},
  volume       = {80},
  year         = {2002},
}