Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Vertical high-mobility wrap-gated InAs nanowire transistor

Bryllert, Tomas LU ; Wernersson, Lars-Erik LU ; Fröberg, Linus LU and Samuelson, Lars LU (2006) In IEEE Electron Device Letters 27(5). p.323-325
Abstract
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
field-effect transistor (FET), wrap gate, nanowires, InAs
in
IEEE Electron Device Letters
volume
27
issue
5
pages
323 - 325
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000237602300005
  • scopus:33646254853
ISSN
0741-3106
DOI
10.1109/LED.2006.873371
language
English
LU publication?
yes
id
9e073653-1b78-4abd-b140-cb22d40cb067 (old id 409657)
date added to LUP
2016-04-01 16:41:52
date last changed
2022-03-30 17:38:28
@article{9e073653-1b78-4abd-b140-cb22d40cb067,
  abstract     = {{In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.}},
  author       = {{Bryllert, Tomas and Wernersson, Lars-Erik and Fröberg, Linus and Samuelson, Lars}},
  issn         = {{0741-3106}},
  keywords     = {{field-effect transistor (FET); wrap gate; nanowires; InAs}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{323--325}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Vertical high-mobility wrap-gated InAs nanowire transistor}},
  url          = {{http://dx.doi.org/10.1109/LED.2006.873371}},
  doi          = {{10.1109/LED.2006.873371}},
  volume       = {{27}},
  year         = {{2006}},
}