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Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

Timm, Rainer LU orcid ; Persson, Olof LU ; Engberg, David ; Fian, Alexander ; Webb, James LU ; Wallentin, Jesper LU ; Jönsson, Andreas ; Borgström, Magnus LU ; Samuelson, Lars LU and Mikkelsen, Anders LU (2013) In Nano Letters 13(11). p.5182-5189
Abstract
Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconductor nanowire, scanning tunneling microscopy, Ohmic contact, nanowire contacts, resistivity
in
Nano Letters
volume
13
issue
11
pages
5182 - 5189
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000327111700031
  • scopus:84887847197
  • pmid:24059470
ISSN
1530-6992
DOI
10.1021/nl402570u
language
English
LU publication?
yes
id
99564106-9802-4028-97e4-ec7b86bee26f (old id 4153268)
date added to LUP
2016-04-01 15:04:23
date last changed
2023-09-17 23:03:15
@article{99564106-9802-4028-97e4-ec7b86bee26f,
  abstract     = {{Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.}},
  author       = {{Timm, Rainer and Persson, Olof and Engberg, David and Fian, Alexander and Webb, James and Wallentin, Jesper and Jönsson, Andreas and Borgström, Magnus and Samuelson, Lars and Mikkelsen, Anders}},
  issn         = {{1530-6992}},
  keywords     = {{semiconductor nanowire; scanning tunneling microscopy; Ohmic contact; nanowire contacts; resistivity}},
  language     = {{eng}},
  number       = {{11}},
  pages        = {{5182--5189}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope}},
  url          = {{http://dx.doi.org/10.1021/nl402570u}},
  doi          = {{10.1021/nl402570u}},
  volume       = {{13}},
  year         = {{2013}},
}