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Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

Mo, Jiongjiong LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2014) In IEEE Electron Device Letters 35(5). p.515-517
Abstract
We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InGaAs MOSFET, source/drain engineering, voltage gain, oscillation, frequency
in
IEEE Electron Device Letters
volume
35
issue
5
pages
515 - 517
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000335147600005
  • scopus:84899725361
ISSN
0741-3106
DOI
10.1109/LED.2014.2308925
language
English
LU publication?
yes
id
045002bd-1ccf-4eca-9185-509afcde4d1e (old id 4482412)
date added to LUP
2014-06-19 14:05:15
date last changed
2017-10-01 04:23:41
@article{045002bd-1ccf-4eca-9185-509afcde4d1e,
  abstract     = {We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.},
  author       = {Mo, Jiongjiong and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {InGaAs MOSFET,source/drain engineering,voltage gain,oscillation,frequency},
  language     = {eng},
  number       = {5},
  pages        = {515--517},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering},
  url          = {http://dx.doi.org/10.1109/LED.2014.2308925},
  volume       = {35},
  year         = {2014},
}