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High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Johansson, Sofia LU ; Memisevic, Elvedin LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2014) In IEEE Electron Device Letters 35(5). p.518-520
Abstract
We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 GHz. The transistor has a transconductance of 730 mS/mm and is based on arrays of nanowires with gate-all-around and high-kappa gate dielectric. Furthermore, small-signal modeling shows a similar to 80% reduction of the total parasitic gate capacitance when the metal pad overlap in the transistors is reduced through additional patterning.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowire, III-V, MOSFET, RF, transistor, InAs
in
IEEE Electron Device Letters
volume
35
issue
5
pages
518 - 520
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000335147600006
  • scopus:84899986783
ISSN
0741-3106
DOI
10.1109/LED.2014.2310119
language
English
LU publication?
yes
id
5662097c-52ea-4c0a-b561-34958efd55e1 (old id 4482417)
date added to LUP
2014-06-19 14:06:42
date last changed
2017-10-01 04:04:27
@article{5662097c-52ea-4c0a-b561-34958efd55e1,
  abstract     = {We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 GHz. The transistor has a transconductance of 730 mS/mm and is based on arrays of nanowires with gate-all-around and high-kappa gate dielectric. Furthermore, small-signal modeling shows a similar to 80% reduction of the total parasitic gate capacitance when the metal pad overlap in the transistors is reduced through additional patterning.},
  author       = {Johansson, Sofia and Memisevic, Elvedin and Wernersson, Lars-Erik and Lind, Erik},
  issn         = {0741-3106},
  keyword      = {Nanowire,III-V,MOSFET,RF,transistor,InAs},
  language     = {eng},
  number       = {5},
  pages        = {518--520},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates},
  url          = {http://dx.doi.org/10.1109/LED.2014.2310119},
  volume       = {35},
  year         = {2014},
}