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Electrical properties of GaSb/InAsSb core/shell nanowires

Ganjipour, Bahram LU ; Sepehri, Sobhan; Dey, Anil LU ; Tizno, Ofogh LU ; Borg, B Mattias; Dick Thelander, Kimberly LU ; Samuelson, Lars LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU (2014) In Nanotechnology 25(42).
Abstract

Temperature dependent electronic properties of GaSb/InAsSb core/shell and GaSb nanowires have been studied. Results from two-probe and four-probe measurements are compared to distinguish between extrinsic (contact-related) and intrinsic (nanowire) properties. It is found that a thin (2-3 nm) InAsSb shell allows low barrier charge carrier injection to the GaSb core, and that the presence of the shell also improves intrinsic nanowire mobility and conductance in comparison to bare GaSb nanowires. Maximum intrinsic field effect mobilities of 200 and 42 cm(2) Vs(-1) were extracted for the GaSb/InAsSb core/shell and bare-GaSb NWs at room temperature, respectively. The temperature-dependence of the mobility suggests that ionized impurity... (More)

Temperature dependent electronic properties of GaSb/InAsSb core/shell and GaSb nanowires have been studied. Results from two-probe and four-probe measurements are compared to distinguish between extrinsic (contact-related) and intrinsic (nanowire) properties. It is found that a thin (2-3 nm) InAsSb shell allows low barrier charge carrier injection to the GaSb core, and that the presence of the shell also improves intrinsic nanowire mobility and conductance in comparison to bare GaSb nanowires. Maximum intrinsic field effect mobilities of 200 and 42 cm(2) Vs(-1) were extracted for the GaSb/InAsSb core/shell and bare-GaSb NWs at room temperature, respectively. The temperature-dependence of the mobility suggests that ionized impurity scattering is the dominant scattering mechanism in bare GaSb while phonon scattering dominates in core/shell nanowires. Top-gated field effect transistors were fabricated based on radial GaSb/InAsSb heterostructure nanowires with shell thicknesses in the range 5-7 nm. The fabricated devices exhibited ambipolar conduction, where the output current was studied as a function of AC gate voltage and frequency. Frequency doubling was experimentally demonstrated up to 20 kHz. The maximum operating frequency was limited by parasitic capacitance associated with the measurement chip geometry.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
25
issue
42
publisher
IOP Publishing
external identifiers
  • pmid:25264978
  • wos:000342580700004
  • scopus:84907755937
ISSN
0957-4484
DOI
10.1088/0957-4484/25/42/425201
language
English
LU publication?
yes
id
81fe1854-e8ef-4e57-915c-712e24c5c448 (old id 4690742)
date added to LUP
2014-10-09 09:23:21
date last changed
2017-07-23 03:27:28
@article{81fe1854-e8ef-4e57-915c-712e24c5c448,
  abstract     = {<p>Temperature dependent electronic properties of GaSb/InAsSb core/shell and GaSb nanowires have been studied. Results from two-probe and four-probe measurements are compared to distinguish between extrinsic (contact-related) and intrinsic (nanowire) properties. It is found that a thin (2-3 nm) InAsSb shell allows low barrier charge carrier injection to the GaSb core, and that the presence of the shell also improves intrinsic nanowire mobility and conductance in comparison to bare GaSb nanowires. Maximum intrinsic field effect mobilities of 200 and 42 cm(2) Vs(-1) were extracted for the GaSb/InAsSb core/shell and bare-GaSb NWs at room temperature, respectively. The temperature-dependence of the mobility suggests that ionized impurity scattering is the dominant scattering mechanism in bare GaSb while phonon scattering dominates in core/shell nanowires. Top-gated field effect transistors were fabricated based on radial GaSb/InAsSb heterostructure nanowires with shell thicknesses in the range 5-7 nm. The fabricated devices exhibited ambipolar conduction, where the output current was studied as a function of AC gate voltage and frequency. Frequency doubling was experimentally demonstrated up to 20 kHz. The maximum operating frequency was limited by parasitic capacitance associated with the measurement chip geometry.</p>},
  articleno    = {425201},
  author       = {Ganjipour, Bahram and Sepehri, Sobhan and Dey, Anil and Tizno, Ofogh and Borg, B Mattias and Dick Thelander, Kimberly and Samuelson, Lars and Wernersson, Lars-Erik and Thelander, Claes},
  issn         = {0957-4484},
  language     = {eng},
  number       = {42},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Electrical properties of GaSb/InAsSb core/shell nanowires},
  url          = {http://dx.doi.org/10.1088/0957-4484/25/42/425201},
  volume       = {25},
  year         = {2014},
}