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In situ etching for control over axial and radial III-V nanowire growth rates using HBr.

Berg, Alexander LU ; Mergenthaler, Kilian LU ; Ek, Martin LU ; Pistol, Mats-Erik LU ; Wallenberg, Reine LU and Borgström, Magnus LU (2014) In Nanotechnology 25(50).
Abstract
We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was... (More)
We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
25
issue
50
publisher
IOP Publishing
external identifiers
  • pmid:25422409
  • wos:000345603900014
  • scopus:84913583284
ISSN
0957-4484
DOI
10.1088/0957-4484/25/50/505601
language
English
LU publication?
yes
id
6d6c7637-4935-476a-81fd-aa42aa7abca2 (old id 4816078)
date added to LUP
2014-12-08 15:21:32
date last changed
2017-02-26 03:17:53
@article{6d6c7637-4935-476a-81fd-aa42aa7abca2,
  abstract     = {We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments.},
  articleno    = {505601},
  author       = {Berg, Alexander and Mergenthaler, Kilian and Ek, Martin and Pistol, Mats-Erik and Wallenberg, Reine and Borgström, Magnus},
  issn         = {0957-4484},
  language     = {eng},
  number       = {50},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {In situ etching for control over axial and radial III-V nanowire growth rates using HBr.},
  url          = {http://dx.doi.org/10.1088/0957-4484/25/50/505601},
  volume       = {25},
  year         = {2014},
}