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In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V

Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2014) 72nd Annual Device Research Conference (DRC) In 2014 72nd Annual Device Research Conference (DRC) p.209-210
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2014 72nd Annual Device Research Conference (DRC)
pages
209 - 210
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
72nd Annual Device Research Conference (DRC)
external identifiers
  • wos:000346309800096
ISSN
1548-3770
language
English
LU publication?
yes
id
639b99f8-dec5-4382-bc54-7a946d81b22a (old id 4950610)
date added to LUP
2015-01-26 14:17:05
date last changed
2016-04-15 22:35:37
@inproceedings{639b99f8-dec5-4382-bc54-7a946d81b22a,
  author       = {Zota, Cezar and Wernersson, Lars-Erik and Lind, Erik},
  booktitle    = {2014 72nd Annual Device Research Conference (DRC)},
  issn         = {1548-3770},
  language     = {eng},
  pages        = {209--210},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V},
  year         = {2014},
}