In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(2014) 72nd Annual Device Research Conference (DRC) p.209-210
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4950610
- author
- Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
- organization
- publishing date
- 2014
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2014 72nd Annual Device Research Conference (DRC)
- pages
- 209 - 210
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 72nd Annual Device Research Conference (DRC)
- conference dates
- 2014-06-22 - 2014-06-25
- external identifiers
-
- wos:000346309800096
- ISSN
- 1548-3770
- language
- English
- LU publication?
- yes
- id
- 639b99f8-dec5-4382-bc54-7a946d81b22a (old id 4950610)
- date added to LUP
- 2016-04-01 13:31:43
- date last changed
- 2018-11-21 23:52:36
@inproceedings{639b99f8-dec5-4382-bc54-7a946d81b22a, author = {{Zota, Cezar and Wernersson, Lars-Erik and Lind, Erik}}, booktitle = {{2014 72nd Annual Device Research Conference (DRC)}}, issn = {{1548-3770}}, language = {{eng}}, pages = {{209--210}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V}}, year = {{2014}}, }