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Zn-doping of GaAs nanowires grown by Aerotaxy

Yang, Fangfang LU ; Messing, Maria LU ; Mergenthaler, Kilian LU ; Ghasemi, Masoomeh LU ; Johansson, Jonas LU ; Wallenberg, Reine LU ; Pistol, Mats-Erik LU ; Deppert, Knut LU ; Samuelson, Lars LU and Magnusson, Martin LU (2015) In Journal of Crystal Growth 414. p.181-186
Abstract
Nanowires were grown by means of a novel aerosol-based method called Aerotaxy. Here an aerosol of Au catalyst nanoparticles in N-2 is mixed with MOVPE precursors in a flow-through reactor at atmospheric pressure, whereby nanowires are produced continuously in high concentrations. We demonstrate the possibility of in situ doping of the NWs and the realization of well-controlled p-type GaAs nanowires using this Aerotaxy method. By controlling the cracking and concentration of the precursors, p-doped GaAs nanowires could be grown exhibiting a wide range of Zn doping levels. DEZn was used as the dopant source and the injected DEZn/TMGa ratio was varied from 0.1% to 3.4%. The morphology, the crystalline structure and the composition of the... (More)
Nanowires were grown by means of a novel aerosol-based method called Aerotaxy. Here an aerosol of Au catalyst nanoparticles in N-2 is mixed with MOVPE precursors in a flow-through reactor at atmospheric pressure, whereby nanowires are produced continuously in high concentrations. We demonstrate the possibility of in situ doping of the NWs and the realization of well-controlled p-type GaAs nanowires using this Aerotaxy method. By controlling the cracking and concentration of the precursors, p-doped GaAs nanowires could be grown exhibiting a wide range of Zn doping levels. DEZn was used as the dopant source and the injected DEZn/TMGa ratio was varied from 0.1% to 3.4%. The morphology, the crystalline structure and the composition of the nanowires were studied using SEM, TEM and XEDS. The nanowires were grown straight without any significant tapering and this ideal morphology could be maintained up to an injected DEZn/TMGa ratio of 3.4%. The nanowires typically grew in the [111] direction with a pure zincblende structure, but by increasing the DEZn flow the number of twinning defects increased which we ascribe to Zn incorporation. Elemental analysis shows a high Zn content in the catalyst particle and also a gradient in the Zn content along the nanowire. The samples were analyzed optically using photoluminescence (PL). From the result we estimated the free hole concentration induced by Zn acceptors to be 1 x 10(20) cm(-3) for DEZn/TMGa ratio of 34%. To our knowledge this is the first report on in situ doping of GaAs nanowires grown by Aerotaxy. (C) 2014 Elsevier B.V. All rights reserved. (Less)
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author
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Contribution to journal
publication status
published
subject
keywords
Nanostructures, Metalorganic vapour phase epitaxy, Arsenates, Gallium, compounds, Nanomaterials, Semiconducting III-V materials
in
Journal of Crystal Growth
volume
414
pages
181 - 186
publisher
Elsevier
external identifiers
  • wos:000349602900033
  • scopus:84922529857
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2014.09.051
language
English
LU publication?
yes
id
5fe58033-8217-46e7-a27f-dc2d3567f793 (old id 5160066)
date added to LUP
2015-03-25 08:17:47
date last changed
2017-10-22 04:00:00
@article{5fe58033-8217-46e7-a27f-dc2d3567f793,
  abstract     = {Nanowires were grown by means of a novel aerosol-based method called Aerotaxy. Here an aerosol of Au catalyst nanoparticles in N-2 is mixed with MOVPE precursors in a flow-through reactor at atmospheric pressure, whereby nanowires are produced continuously in high concentrations. We demonstrate the possibility of in situ doping of the NWs and the realization of well-controlled p-type GaAs nanowires using this Aerotaxy method. By controlling the cracking and concentration of the precursors, p-doped GaAs nanowires could be grown exhibiting a wide range of Zn doping levels. DEZn was used as the dopant source and the injected DEZn/TMGa ratio was varied from 0.1% to 3.4%. The morphology, the crystalline structure and the composition of the nanowires were studied using SEM, TEM and XEDS. The nanowires were grown straight without any significant tapering and this ideal morphology could be maintained up to an injected DEZn/TMGa ratio of 3.4%. The nanowires typically grew in the [111] direction with a pure zincblende structure, but by increasing the DEZn flow the number of twinning defects increased which we ascribe to Zn incorporation. Elemental analysis shows a high Zn content in the catalyst particle and also a gradient in the Zn content along the nanowire. The samples were analyzed optically using photoluminescence (PL). From the result we estimated the free hole concentration induced by Zn acceptors to be 1 x 10(20) cm(-3) for DEZn/TMGa ratio of 34%. To our knowledge this is the first report on in situ doping of GaAs nanowires grown by Aerotaxy. (C) 2014 Elsevier B.V. All rights reserved.},
  author       = {Yang, Fangfang and Messing, Maria and Mergenthaler, Kilian and Ghasemi, Masoomeh and Johansson, Jonas and Wallenberg, Reine and Pistol, Mats-Erik and Deppert, Knut and Samuelson, Lars and Magnusson, Martin},
  issn         = {0022-0248},
  keyword      = {Nanostructures,Metalorganic vapour phase epitaxy,Arsenates,Gallium,compounds,Nanomaterials,Semiconducting III-V materials},
  language     = {eng},
  pages        = {181--186},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Zn-doping of GaAs nanowires grown by Aerotaxy},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2014.09.051},
  volume       = {414},
  year         = {2015},
}