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InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

Mo, Jiongjiong LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2015) In IEEE Transactions on Electron Devices 62(2). p.501-506
Abstract
The design of the InP drain layer in asymmetric InGaAs/InP MOSFETs has been studied experimentally. The influence of doping and thickness of the InP drain has been carefully measured and compared with the performance with an InGaAs drain, regarding the output conductance, the voltage gain, and the leakage current. It is shown that the introduction of an undoped InP spacer has a profound effect on the transistor characteristics. Finally, the effect of a gate-connected field plate at the InP drain side has also been studied both in dc and RF data.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V MOSFET, band-to-band tunneling, drain engineering, leakage current
in
IEEE Transactions on Electron Devices
volume
62
issue
2
pages
501 - 506
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000348386100034
  • scopus:84921814060
ISSN
0018-9383
DOI
10.1109/TED.2014.2375913
language
English
LU publication?
yes
id
ba190bea-898c-472e-af1a-512a810def2d (old id 5201201)
date added to LUP
2015-03-26 14:06:40
date last changed
2017-10-22 04:11:56
@article{ba190bea-898c-472e-af1a-512a810def2d,
  abstract     = {The design of the InP drain layer in asymmetric InGaAs/InP MOSFETs has been studied experimentally. The influence of doping and thickness of the InP drain has been carefully measured and compared with the performance with an InGaAs drain, regarding the output conductance, the voltage gain, and the leakage current. It is shown that the introduction of an undoped InP spacer has a profound effect on the transistor characteristics. Finally, the effect of a gate-connected field plate at the InP drain side has also been studied both in dc and RF data.},
  author       = {Mo, Jiongjiong and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0018-9383},
  keyword      = {III-V MOSFET,band-to-band tunneling,drain engineering,leakage current},
  language     = {eng},
  number       = {2},
  pages        = {501--506},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs},
  url          = {http://dx.doi.org/10.1109/TED.2014.2375913},
  volume       = {62},
  year         = {2015},
}