InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
(2015) In IEEE Transactions on Electron Devices 62(2). p.501-506- Abstract
- The design of the InP drain layer in asymmetric InGaAs/InP MOSFETs has been studied experimentally. The influence of doping and thickness of the InP drain has been carefully measured and compared with the performance with an InGaAs drain, regarding the output conductance, the voltage gain, and the leakage current. It is shown that the introduction of an undoped InP spacer has a profound effect on the transistor characteristics. Finally, the effect of a gate-connected field plate at the InP drain side has also been studied both in dc and RF data.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/5201201
- author
- Mo, Jiongjiong LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- III-V MOSFET, band-to-band tunneling, drain engineering, leakage current
- in
- IEEE Transactions on Electron Devices
- volume
- 62
- issue
- 2
- pages
- 501 - 506
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000348386100034
- scopus:84921814060
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2014.2375913
- language
- English
- LU publication?
- yes
- id
- ba190bea-898c-472e-af1a-512a810def2d (old id 5201201)
- date added to LUP
- 2016-04-01 13:50:03
- date last changed
- 2024-03-13 18:17:15
@article{ba190bea-898c-472e-af1a-512a810def2d, abstract = {{The design of the InP drain layer in asymmetric InGaAs/InP MOSFETs has been studied experimentally. The influence of doping and thickness of the InP drain has been carefully measured and compared with the performance with an InGaAs drain, regarding the output conductance, the voltage gain, and the leakage current. It is shown that the introduction of an undoped InP spacer has a profound effect on the transistor characteristics. Finally, the effect of a gate-connected field plate at the InP drain side has also been studied both in dc and RF data.}}, author = {{Mo, Jiongjiong and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{0018-9383}}, keywords = {{III-V MOSFET; band-to-band tunneling; drain engineering; leakage current}}, language = {{eng}}, number = {{2}}, pages = {{501--506}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs}}, url = {{http://dx.doi.org/10.1109/TED.2014.2375913}}, doi = {{10.1109/TED.2014.2375913}}, volume = {{62}}, year = {{2015}}, }