Advanced

Measurement of strain in InGaN/GaN nanowires and nanopyramids

Stankevic, Tomas; Mickevicius, Simas; Nielsen, Mikkel Schou; Kryliouk, Olga; Ciechonski, Rafal; Vescovi, Giuliano; Bi, Zhaoxia LU ; Mikkelsen, Anders LU ; Samuelson, Lars LU and Gundlach, Carsten, et al. (2015) In Journal of Applied Crystallography 48. p.344-349
Abstract
The growth and optoelectronic properties of core-shell nanostructures are influenced by the strain induced by the lattice mismatch between core and shell. In contrast with planar films, nanostructures contain multiple facets that act as independent substrates for shell growth, which enables different relaxation mechanisms. In this study, X-ray diffraction data are presented that show that InGa1-N shells grown on GaN cores are strained along each of the facets independently. Reciprocal space maps reveal multiple Bragg peaks, corresponding to different parts of the shell being strained along the individual facet planes. The strained lattice constants were found from the positions of the Bragg peaks. Vegard's law and Hooke's law for an... (More)
The growth and optoelectronic properties of core-shell nanostructures are influenced by the strain induced by the lattice mismatch between core and shell. In contrast with planar films, nanostructures contain multiple facets that act as independent substrates for shell growth, which enables different relaxation mechanisms. In this study, X-ray diffraction data are presented that show that InGa1-N shells grown on GaN cores are strained along each of the facets independently. Reciprocal space maps reveal multiple Bragg peaks, corresponding to different parts of the shell being strained along the individual facet planes. The strained lattice constants were found from the positions of the Bragg peaks. Vegard's law and Hooke's law for an anisotropic medium were applied in order to find the composition and strain in the InGaN shells. A range of nanowire samples with different InGaN shell thicknesses were measured and it is concluded that, with an In concentration of around 30%, major strain relaxation takes place when the thickness reaches 23nm. InGaN shells of 6 and 9nm thickness remain nearly fully strained biaxially along each of the facets of the nanowires and the facets of the nanopyramids. (Less)
Please use this url to cite or link to this publication:
author
, et al. (More)
(Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowires, nanopyramids, InGaN, GaN, core-shell nanostructures, optoelectronics
in
Journal of Applied Crystallography
volume
48
pages
344 - 349
publisher
Wiley-Blackwell
external identifiers
  • wos:000352229100004
  • scopus:84926359531
ISSN
1600-5767
DOI
10.1107/S1600576715000965
language
English
LU publication?
yes
id
9aeffb0f-97db-4170-b0ea-1326e42c1a97 (old id 5402908)
date added to LUP
2015-05-19 14:24:57
date last changed
2017-08-06 03:02:02
@article{9aeffb0f-97db-4170-b0ea-1326e42c1a97,
  abstract     = {The growth and optoelectronic properties of core-shell nanostructures are influenced by the strain induced by the lattice mismatch between core and shell. In contrast with planar films, nanostructures contain multiple facets that act as independent substrates for shell growth, which enables different relaxation mechanisms. In this study, X-ray diffraction data are presented that show that InGa1-N shells grown on GaN cores are strained along each of the facets independently. Reciprocal space maps reveal multiple Bragg peaks, corresponding to different parts of the shell being strained along the individual facet planes. The strained lattice constants were found from the positions of the Bragg peaks. Vegard's law and Hooke's law for an anisotropic medium were applied in order to find the composition and strain in the InGaN shells. A range of nanowire samples with different InGaN shell thicknesses were measured and it is concluded that, with an In concentration of around 30%, major strain relaxation takes place when the thickness reaches 23nm. InGaN shells of 6 and 9nm thickness remain nearly fully strained biaxially along each of the facets of the nanowires and the facets of the nanopyramids.},
  author       = {Stankevic, Tomas and Mickevicius, Simas and Nielsen, Mikkel Schou and Kryliouk, Olga and Ciechonski, Rafal and Vescovi, Giuliano and Bi, Zhaoxia and Mikkelsen, Anders and Samuelson, Lars and Gundlach, Carsten and Feidenhans'l, Robert},
  issn         = {1600-5767},
  keyword      = {nanowires,nanopyramids,InGaN,GaN,core-shell nanostructures,optoelectronics},
  language     = {eng},
  pages        = {344--349},
  publisher    = {Wiley-Blackwell},
  series       = {Journal of Applied Crystallography},
  title        = {Measurement of strain in InGaN/GaN nanowires and nanopyramids},
  url          = {http://dx.doi.org/10.1107/S1600576715000965},
  volume       = {48},
  year         = {2015},
}